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Wetzel, C., Takeuchi, T., Yamaguchi, S., Katoh, H., Amano, H., Akasaki, I. (1998) Optical band gap in Ga1−xInxN (0Applied Physics Letters, 73 (14). 1994-1996 doi:10.1063/1.122346

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Reference TypeJournal (article/letter/editorial)
TitleOptical band gap in Ga1−xInxN (0
JournalApplied Physics Letters
AuthorsWetzel, C.Author
Takeuchi, T.Author
Yamaguchi, S.Author
Katoh, H.Author
Amano, H.Author
Akasaki, I.Author
Year1998 (October 5)Volume73
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.122346Search in ResearchGate
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Mindat Ref. ID8521966Long-form Identifiermindat:1:5:8521966:3
GUID0
Full ReferenceWetzel, C., Takeuchi, T., Yamaguchi, S., Katoh, H., Amano, H., Akasaki, I. (1998) Optical band gap in Ga1−xInxN (0Applied Physics Letters, 73 (14). 1994-1996 doi:10.1063/1.122346
Plain TextWetzel, C., Takeuchi, T., Yamaguchi, S., Katoh, H., Amano, H., Akasaki, I. (1998) Optical band gap in Ga1−xInxN (0
In(1998, October) Applied Physics Letters Vol. 73 (14) AIP Publishing

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Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (2000) Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures. Physical Review B, 61 (3) 2159-2163 doi:10.1103/physrevb.61.2159
Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (2000) Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells. Physical Review B, 62 (20) doi:10.1103/physrevb.62.r13302
Wetzel, Christian, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2002) Optical Absorption in Polarized Ga1-xInxN/GaN Quantum Wells. Japanese Journal of Applied Physics, 41. 11-14 doi:10.1143/jjap.41.11
Wetzel, C, Takeuchi, T, Amano, H, Akasaki, I (1998) Valence band splitting and luminescence Stokes shift in GaInN/GaN thin films and multiple quantum well structures. Journal of Crystal Growth, 189. 621-624 doi:10.1016/s0022-0248(98)00220-6
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu (1998) Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 73 (6). 830-831 doi:10.1063/1.122015
Amano, Hiroshi, Takeuchi, T., Sakai, Hiroshi, Yamaguchi, S., Wetzel, C., Akasaki, Isamu (1998) Heteroepitaxy of Group III Nitrides for Device Applications. Materials Science Forum, 264. 1115-1120 doi:10.4028/www.scientific.net/msf.264-268.1115
Yamaguchi, Shigeo, Kariya, Michihiko, Nitta, Shugo, Takeuchi, Tetsuya, Wetzel, Christian, Amano, Hiroshi, Akasaki, Isamu (2000) Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy. Applied Physics Letters, 76 (7). 876-878 doi:10.1063/1.125615
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2009) Activation energy of Mg ina-plane Ga1-xInxN (0 physica status solidi (b), 246 (6). 1188-1190 doi:10.1002/pssb.200880826
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2008) High hole concentration in Mg-doped a-plane Ga1−xInxN (0Applied Physics Letters, 93 (18). 182108pp. doi:10.1063/1.3021087
Iida, Daisuke, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu (2008) Control of p-type conduction in a-plane Ga1−xInxN (0Journal of Crystal Growth, 310 (23). 4996-4998 doi:10.1016/j.jcrysgro.2008.08.005
Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. (1999) Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures. Journal of Applied Physics, 85 (7). 3786-3791 doi:10.1063/1.369749
 
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