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von Bardeleben, H. J., Cantin, J. L., Vickridge, I., Battistig, G. (2000) Proton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study. Physical Review B, 62 (15) 10126-10134 doi:10.1103/physrevb.62.10126

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Reference TypeJournal (article/letter/editorial)
TitleProton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study
JournalPhysical Review B
Authorsvon Bardeleben, H. J.Author
Cantin, J. L.Author
Vickridge, I.Author
Battistig, G.Author
Year2000 (October 15)Volume62
Issue15
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.62.10126Search in ResearchGate
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Mindat Ref. ID14153670Long-form Identifiermindat:1:5:14153670:7
GUID0
Full Referencevon Bardeleben, H. J., Cantin, J. L., Vickridge, I., Battistig, G. (2000) Proton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study. Physical Review B, 62 (15) 10126-10134 doi:10.1103/physrevb.62.10126
Plain Textvon Bardeleben, H. J., Cantin, J. L., Vickridge, I., Battistig, G. (2000) Proton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study. Physical Review B, 62 (15) 10126-10134 doi:10.1103/physrevb.62.10126
In(2000, October) Physical Review B Vol. 62 (15) American Physical Society (APS)

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von Bardeleben, H. J., Cantin, J. L., Henry, L., Barthe, M. F. (2000) Vacancy defects inp-type6H−SiCcreated by low-energy electron irradiation. Physical Review B, 62 (16) 10841-10846 doi:10.1103/physrevb.62.10841
Mahmoud, A. Ben, von Bardeleben, H. J., Cantin, J. L., Mauger, A., Chikoidze, E., Dumont, Y. (2006) From ferromagnetic to antiferromagnetic interactions inn-typeZn1−xMnxO: An electron paramagnetic resonance study. Physical Review B, 74 (11) doi:10.1103/physrevb.74.115203
Jedrecy, N., von Bardeleben, H. J., Zheng, Y., Cantin, J-L. (2004) Electron paramagnetic resonance study ofZn1−xCoxO:A predicted high-temperature ferromagnetic semiconductor. Physical Review B, 69 (4) doi:10.1103/physrevb.69.041308
Aubert, P., von Bardeleben, H. J., Delmotte, F., Cantin, J. L., Hugon, M. C. (1999) Electron-paramagnetic-resonance study of the(100)Si/Si3N4interface. Physical Review B, 59 (16) 10677-10684 doi:10.1103/physrevb.59.10677
Cantin, J. L., Schoisswohl, M., von Bardeleben, H. J., Hadj Zoubir, N., Vergnat, M. (1995) Electron-paramagnetic-resonance study of the microscopic structure of the Si(001)-SiO2interface. Physical Review B, 52 (16) doi:10.1103/physrevb.52.r11599
von Bardeleben, H. J., Stievenard, D., Grosman, A., Ortega, C., Siejka, J. (1993) Defects in porousp-type Si: An electron-paramagnetic-resonance study. Physical Review B, 47 (16) 10899-10902 doi:10.1103/physrevb.47.10899
Zargaleh, S. A., von Bardeleben, H. J., Cantin, J. L., Gerstmann, U., Hameau, S., Eblé, B., Gao, Weibo (2018) Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H -SiC. Physical Review B, 98 (21) doi:10.1103/physrevb.98.214113
von Bardeleben, H.J, Cantin, J.L (2002) Electron paramagnetic resonance study of proton implantation induced defects in monocrystalline 4H– and 6H–SiC. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186 (1). 201-205 doi:10.1016/s0168-583x(01)00884-9
Schoisswohl, M., Cantin, J. L., von Bardeleben, H. J., Amato, G. (1995) Electron paramagnetic resonance study of luminescent stain etched porous silicon. Applied Physics Letters, 66 (26). 3660-3662 doi:10.1063/1.114132
Gerstmann, U., Seitsonen, A. P., Ceresoli, D., Mauri, F., von Bardeleben, H. J., Cantin, J. L., Garcia Lopez, J. (2010) SiCCSiantisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195208
Baranov, P. G., Ilyin, I. V., Mokhov, E. N., von Bardeleben, H. J., Cantin, J. L. (2002) EPR study of shallow and deep phosphorous centers in6H−SiC. Physical Review B, 66 (16) doi:10.1103/physrevb.66.165206
 
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