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Gerstmann, U., Seitsonen, A. P., Ceresoli, D., Mauri, F., von Bardeleben, H. J., Cantin, J. L., Garcia Lopez, J. (2010) SiCCSiantisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195208

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Reference TypeJournal (article/letter/editorial)
TitleSiCCSiantisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
JournalPhysical Review B
AuthorsGerstmann, U.Author
Seitsonen, A. P.Author
Ceresoli, D.Author
Mauri, F.Author
von Bardeleben, H. J.Author
Cantin, J. L.Author
Garcia Lopez, J.Author
Year2010 (May 17)Volume81
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.81.195208Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14207345Long-form Identifiermindat:1:5:14207345:4
GUID0
Full ReferenceGerstmann, U., Seitsonen, A. P., Ceresoli, D., Mauri, F., von Bardeleben, H. J., Cantin, J. L., Garcia Lopez, J. (2010) SiCCSiantisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195208
Plain TextGerstmann, U., Seitsonen, A. P., Ceresoli, D., Mauri, F., von Bardeleben, H. J., Cantin, J. L., Garcia Lopez, J. (2010) SiCCSiantisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195208
In(2010, May) Physical Review B Vol. 81 (19) American Physical Society (APS)

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Gerstmann, Uwe, Seitsonen, A.P., Mauri, Francesco, von Bardeleben, Hans Jürgen (2009) SiCCSiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC. Materials Science Forum, 615. 357-360 doi:10.4028/www.scientific.net/msf.615-617.357
Ceresoli, Davide, Gerstmann, Uwe, Seitsonen, Ari P., Mauri, Francesco (2010) First-principles theory of orbital magnetization. Physical Review B, 81 (6) doi:10.1103/physrevb.81.060409
Zargaleh, S. A., von Bardeleben, H. J., Cantin, J. L., Gerstmann, U., Hameau, S., Eblé, B., Gao, Weibo (2018) Electron paramagnetic resonance tagged high-resolution excitation spectroscopy of NV-centers in 4H -SiC. Physical Review B, 98 (21) doi:10.1103/physrevb.98.214113
von Bardeleben, H. J., Cantin, J. L., Rauls, E., Gerstmann, U. (2015) Identification and magneto-optical properties of the NV center in4H−SiC. Physical Review B, 92 (6) doi:10.1103/physrevb.92.064104
Zargaleh, S. A., Eble, B., Hameau, S., Cantin, J.-L., Legrand, L., Bernard, M., Margaillan, F., Lauret, J.-S., Roch, J.-F., von Bardeleben, H. J., Rauls, E., Gerstmann, U., Treussart, F. (2016) Evidence for near-infrared photoluminescence of nitrogen vacancy centers in4H-SiC. Physical Review B, 94 (6) doi:10.1103/physrevb.94.060102
von Bardeleben, H. J., Cantin, J. L., Vrielinck, H., Callens, F., Binet, L., Rauls, E., Gerstmann, U. (2014) Nitrogen split interstitial center(N−N)Nin GaN: High frequency EPR and ENDOR study. Physical Review B, 90 (8) doi:10.1103/physrevb.90.085203
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Khazen, Kh., von Bardeleben, H. J., Zargaleh, S. A., Cantin, J. L., Zhao, Mu, Gao, Weibo, Biktagirov, T., Gerstmann, U. (2019) High-resolution resonant excitation of NV centers in 6H−SiC : A matrix for quantum technology applications. Physical Review B, 100 (20) doi:10.1103/physrevb.100.205202
von Bardeleben, H. J., Cantin, J. L., Csóré, A., Gali, A., Rauls, E., Gerstmann, U. (2016) NV centers in3C,4H, and6Hsilicon carbide: A variable platform for solid-state qubits and nanosensors. Physical Review B, 94 (12) doi:10.1103/physrevb.94.121202
von Bardeleben, H. J., Cantin, J. L., Vickridge, I., Battistig, G. (2000) Proton-implantation-induced defects inn-type6H- and4H−SiC:An electron paramagnetic resonance study. Physical Review B, 62 (15) 10126-10134 doi:10.1103/physrevb.62.10126
Khazen, Kh., von Bardeleben, H. J., Cantin, J. L., Mauger, A., Chen, L., Zhao, J. H. (2010) Intrinsically limited critical temperatures of highly dopedGa1−xMnxAsthin films. Physical Review B, 81 (23) doi:10.1103/physrevb.81.235201
 
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