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Debernardi, A., Baldereschi, A., Fanciulli, M. (2006) Computation of the Stark effect in P impurity states in silicon. Physical Review B, 74 (3) doi:10.1103/physrevb.74.035202

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Reference TypeJournal (article/letter/editorial)
TitleComputation of the Stark effect in P impurity states in silicon
JournalPhysical Review B
AuthorsDebernardi, A.Author
Baldereschi, A.Author
Fanciulli, M.Author
Year2006 (July 11)Volume74
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.74.035202Search in ResearchGate
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Mindat Ref. ID14187375Long-form Identifiermindat:1:5:14187375:8
GUID0
Full ReferenceDebernardi, A., Baldereschi, A., Fanciulli, M. (2006) Computation of the Stark effect in P impurity states in silicon. Physical Review B, 74 (3) doi:10.1103/physrevb.74.035202
Plain TextDebernardi, A., Baldereschi, A., Fanciulli, M. (2006) Computation of the Stark effect in P impurity states in silicon. Physical Review B, 74 (3) doi:10.1103/physrevb.74.035202
In(2006, July) Physical Review B Vol. 74 (3) American Physical Society (APS)

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Stehr, D., Helm, M., Metzner, C., Wanke, M. C. (2006) Microscopic theory of impurity states in coupled quantum wells and superlattices. Physical Review B, 74 (8) doi:10.1103/physrevb.74.085311
Guichar, G. M., Sebenne, C., Proix, F., Balkanski, M. (1972) First-Order Stark Effect in Phosphorus-Doped Silicon from Photoconductivity on Impurity Levels. Physical Review B, 5 (2) 422-425 doi:10.1103/physrevb.5.422
Fanciulli, M., Bonera, E., Nokhrin, S., Pacchioni, G. (2006) Phosphorous–oxygen hole centers in phosphosilicate glass films. Physical Review B, 74 (13) doi:10.1103/physrevb.74.134102
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