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Debernardi, A., Fanciulli, M. (2010) Stark effect of confined shallow levels in phosphorus-doped silicon nanocrystals. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195302

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Reference TypeJournal (article/letter/editorial)
TitleStark effect of confined shallow levels in phosphorus-doped silicon nanocrystals
JournalPhysical Review B
AuthorsDebernardi, A.Author
Fanciulli, M.Author
Year2010 (May 4)Volume81
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.81.195302Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14207356Long-form Identifiermindat:1:5:14207356:0
GUID0
Full ReferenceDebernardi, A., Fanciulli, M. (2010) Stark effect of confined shallow levels in phosphorus-doped silicon nanocrystals. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195302
Plain TextDebernardi, A., Fanciulli, M. (2010) Stark effect of confined shallow levels in phosphorus-doped silicon nanocrystals. Physical Review B, 81 (19) doi:10.1103/physrevb.81.195302
In(2010, May) Physical Review B Vol. 81 (19) American Physical Society (APS)

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Debernardi, A., Baldereschi, A., Fanciulli, M. (2006) Computation of the Stark effect in P impurity states in silicon. Physical Review B, 74 (3) doi:10.1103/physrevb.74.035202
Bulutay, Ceyhun, Kulakci, Mustafa, Turan, RaÅŸit (2010) Stark effect, polarizability, and electroabsorption in silicon nanocrystals. Physical Review B, 81 (12) doi:10.1103/physrevb.81.125333
Petretto, Guido, Massé, Andrea, Fanciulli, Marco, Debernardi, Alberto (2015) Analysis of hyperfine structure in chalcogen-doped silicon and germanium nanowires. Physical Review B, 91 (12) doi:10.1103/physrevb.91.125430
Guichar, G. M., Sebenne, C., Proix, F., Balkanski, M. (1972) First-Order Stark Effect in Phosphorus-Doped Silicon from Photoconductivity on Impurity Levels. Physical Review B, 5 (2) 422-425 doi:10.1103/physrevb.5.422
Debernardi, A., Fanciulli, M. (2009) Confinement effect in P doped spherical Si nanocrystals. Solid State Sciences, 11 (5) 961-964 doi:10.1016/j.solidstatesciences.2007.11.040
Ferretti, Anna, Fanciulli, Marco, Ponti, Alessandro, Schweiger, Arthur (2005) Electron spin-echo relaxation and envelope modulation of shallow phosphorus donors in silicon. Physical Review B, 72 (23) doi:10.1103/physrevb.72.235201
Ihara, Toshiyuki, Kanemitsu, Yoshihiko (2014) Spectral diffusion of neutral and charged exciton transitions in single CdSe/ZnS nanocrystals due to quantum-confined Stark effect. Physical Review B, 90 (19) doi:10.1103/physrevb.90.195302
Belyakov, Vladimir A., Burdov, Vladimir A. (2009) Γ−Xmixing in phosphorus-doped silicon nanocrystals: Improvement of photon generation efficiency. Physical Review B, 79 (3) doi:10.1103/physrevb.79.035302
Debernardi, Alberto, Wiemer, Claudia, Fanciulli, Marco (2007) Epitaxial phase of hafnium dioxide for ultrascaled electronics. Physical Review B, 76 (15) doi:10.1103/physrevb.76.155405
Debernardi, A., Fanciulli, M. (2011) Ab initiostudy of magnetic properties of complexes formed by an Fe impurity and an intrinsic interstitial defect in ZnO. Physical Review B, 84 (2) doi:10.1103/physrevb.84.024415
Picozzi, S., Antoniella, F., Continenza, A., MoscaConte, A., Debernardi, A., Peressi, M. (2004) Stabilization of half metallicity in Mn-doped silicon upon Ge alloying. Physical Review B, 70 (16) doi:10.1103/physrevb.70.165205
 
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