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Estreicher, S. K., Sanati, M., Gonzalez Szwacki, N. (2008) Iron in silicon: Interactions with radiation defects, carbon, and oxygen. Physical Review B, 77 (12) doi:10.1103/physrevb.77.125214

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Reference TypeJournal (article/letter/editorial)
TitleIron in silicon: Interactions with radiation defects, carbon, and oxygen
JournalPhysical Review B
AuthorsEstreicher, S. K.Author
Sanati, M.Author
Gonzalez Szwacki, N.Author
Year2008 (March 26)Volume77
Issue12
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.77.125214Search in ResearchGate
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Mindat Ref. ID14194585Long-form Identifiermindat:1:5:14194585:1
GUID0
Full ReferenceEstreicher, S. K., Sanati, M., Gonzalez Szwacki, N. (2008) Iron in silicon: Interactions with radiation defects, carbon, and oxygen. Physical Review B, 77 (12) doi:10.1103/physrevb.77.125214
Plain TextEstreicher, S. K., Sanati, M., Gonzalez Szwacki, N. (2008) Iron in silicon: Interactions with radiation defects, carbon, and oxygen. Physical Review B, 77 (12) doi:10.1103/physrevb.77.125214
In(2008, March) Physical Review B Vol. 77 (12) American Physical Society (APS)

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Sanati, M., Szwacki, N. Gonzalez, Estreicher, S. K. (2007) Interstitial Fe in Si and its interactions with hydrogen and shallow dopants. Physical Review B, 76 (12) doi:10.1103/physrevb.76.125204
Szwacki, N. Gonzalez, Sanati, M., Estreicher, S. K. (2008) Two FeH pairs inn-type Si and their implications: A theoretical study. Physical Review B, 78 (11) doi:10.1103/physrevb.78.113202
Estreicher, S. K., Sanati, M., West, D., Ruymgaart, F. (2004) Thermodynamics of impurities in semiconductors. Physical Review B, 70 (12) doi:10.1103/physrevb.70.125209
Estreicher, S. K., West, D., Sanati, M. (2005) Cu0*: A metastable configuration of the{Cus,Cui}pair in Si. Physical Review B, 72 (12) doi:10.1103/physrevb.72.121201
Davies, Gordon, Hayama, S., Hao, Shiqiang, Nielsen, B. Bech, Coutinho, J., Sanati, M., Estreicher, S. K., Itoh, K. M. (2005) Host isotope effects on midinfrared optical transitions in silicon. Physical Review B, 71 (11) doi:10.1103/physrevb.71.115212
Gonzalez Szwacki, N., Estreicher, S.K. (2007) First-principles investigations of Fe–H interactions in silicon. Physica B: Condensed Matter, 401. 171-174 doi:10.1016/j.physb.2007.08.139
Backlund, D. J., Gibbons, T. M., Estreicher, S. K. (2016) Vanadium interactions in crystalline silicon. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195210
Sanati, M., Estreicher, S. K. (2005) Temperature and sample dependence of the binding free energies of complexes in crystals: The case of acceptor-oxygen complexes in Si. Physical Review B, 72 (16) doi:10.1103/physrevb.72.165206
Carvalho, A., Jones, R., Sanati, M., Estreicher, S. K., Coutinho, J., Briddon, P. R. (2006) First-principles investigation of a bistable boron-oxygen interstitial pair in Si. Physical Review B, 73 (24) doi:10.1103/physrevb.73.245210
West, D., Estreicher, S. K., Knack, S., Weber, J. (2003) Copper interactions with H, O, and the self-interstitial in silicon. Physical Review B, 68 (3) doi:10.1103/physrevb.68.035210
Backlund, D. J., Estreicher, S. K. (2008) C4 defect and its precursors in Si: First-principles theory. Physical Review B, 77 (20) doi:10.1103/physrevb.77.205205
 
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