Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Backlund, D. J., Gibbons, T. M., Estreicher, S. K. (2016) Vanadium interactions in crystalline silicon. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195210

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleVanadium interactions in crystalline silicon
JournalPhysical Review B
AuthorsBacklund, D. J.Author
Gibbons, T. M.Author
Estreicher, S. K.Author
Year2016 (November 28)Volume94
Issue19
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.94.195210Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14243364Long-form Identifiermindat:1:5:14243364:7
GUID0
Full ReferenceBacklund, D. J., Gibbons, T. M., Estreicher, S. K. (2016) Vanadium interactions in crystalline silicon. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195210
Plain TextBacklund, D. J., Gibbons, T. M., Estreicher, S. K. (2016) Vanadium interactions in crystalline silicon. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195210
In(2016, November) Physical Review B Vol. 94 (19) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Gibbons, T. M., Backlund, D. J., Estreicher, S. K. (2017) Cobalt-related defects in silicon. Journal of Applied Physics, 121 (4). 45704pp. doi:10.1063/1.4975034
Backlund, D. J., Estreicher, S. K. (2010) Ti, Fe, and Ni in Si and their interactions with the vacancy and theAcenter: A theoretical study. Physical Review B, 81 (23) doi:10.1103/physrevb.81.235213
Backlund, D. J., Estreicher, S. K. (2008) C4 defect and its precursors in Si: First-principles theory. Physical Review B, 77 (20) doi:10.1103/physrevb.77.205205
Estreicher, S. K. (1999) Rich chemistry of copper in crystalline silicon. Physical Review B, 60 (8) 5375-5382 doi:10.1103/physrevb.60.5375
West, D., Estreicher, S. K., Knack, S., Weber, J. (2003) Copper interactions with H, O, and the self-interstitial in silicon. Physical Review B, 68 (3) doi:10.1103/physrevb.68.035210
Backlund, D. J., Estreicher, S. K. (2010) Structural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si. Physical Review B, 82 (15) doi:10.1103/physrevb.82.155208
Carvalho, A., Backlund, D. J., Estreicher, S. K. (2011) Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study. Physical Review B, 84 (15) doi:10.1103/physrevb.84.155322
Estreicher, S. K., Sanati, M., Gonzalez Szwacki, N. (2008) Iron in silicon: Interactions with radiation defects, carbon, and oxygen. Physical Review B, 77 (12) doi:10.1103/physrevb.77.125214
Gibbons, T. M., Estreicher, S. K., Potter, K., Bekisli, F., Stavola, M. (2013) Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si. Physical Review B, 87 (11) doi:10.1103/physrevb.87.115207
Gibbons, T. M., Kang, By., Estreicher, S. K., Carbogno, C. (2011) Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping. Physical Review B, 84 (3) doi:10.1103/physrevb.84.035317
Byberg, J. R., Bech Nielsen, B., Fanciulli, M., Estreicher, S. K., Fedders, P. A. (2000) Dimer of substitutional carbon in silicon studied by EPR andab initiomethods. Physical Review B, 61 (19) 12939-12945 doi:10.1103/physrevb.61.12939
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 28, 2025 03:18:44
Go to top of page