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Gibbons, T. M., Backlund, D. J., Estreicher, S. K. (2017) Cobalt-related defects in silicon. Journal of Applied Physics, 121 (4). 45704pp. doi:10.1063/1.4975034

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Reference TypeJournal (article/letter/editorial)
TitleCobalt-related defects in silicon
JournalJournal of Applied Physics
AuthorsGibbons, T. M.Author
Backlund, D. J.Author
Estreicher, S. K.Author
Year2017 (January 28)Volume121
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.4975034Search in ResearchGate
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Mindat Ref. ID5207144Long-form Identifiermindat:1:5:5207144:5
GUID0
Full ReferenceGibbons, T. M., Backlund, D. J., Estreicher, S. K. (2017) Cobalt-related defects in silicon. Journal of Applied Physics, 121 (4). 45704pp. doi:10.1063/1.4975034
Plain TextGibbons, T. M., Backlund, D. J., Estreicher, S. K. (2017) Cobalt-related defects in silicon. Journal of Applied Physics, 121 (4). 45704pp. doi:10.1063/1.4975034
In(2017, January) Journal of Applied Physics Vol. 121 (4) AIP Publishing

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Machado, W. V. M., Justo, J. F., Assali, L. V. C. (2015) Iron and manganese-related magnetic centers in hexagonal silicon carbide: A possible roadmap for spintronic devices. Journal of Applied Physics, 118 (4). 45704pp. doi:10.1063/1.4927293
Niewelt, T., Selinger, M., Grant, N. E., Kwapil, W., Murphy, J. D., Schubert, M. C. (2017) Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon. Journal of Applied Physics, 121 (18). 185702pp. doi:10.1063/1.4983024
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