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Stübner, R., Kolkovsky, Vl., Weber, J., Abrosimov, N. V., Stanley, C. M., Backlund, D. J., Estreicher, S. K. (2020) Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys. Journal of Applied Physics, 127 (4). 45701pp. doi:10.1063/1.5135757

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Reference TypeJournal (article/letter/editorial)
TitleIdentification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys
JournalJournal of Applied Physics
AuthorsStübner, R.Author
Kolkovsky, Vl.Author
Weber, J.Author
Abrosimov, N. V.Author
Stanley, C. M.Author
Backlund, D. J.Author
Estreicher, S. K.Author
Year2020 (January 31)Volume127
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.5135757Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5213054Long-form Identifiermindat:1:5:5213054:4
GUID0
Full ReferenceStübner, R., Kolkovsky, Vl., Weber, J., Abrosimov, N. V., Stanley, C. M., Backlund, D. J., Estreicher, S. K. (2020) Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys. Journal of Applied Physics, 127 (4). 45701pp. doi:10.1063/1.5135757
Plain TextStübner, R., Kolkovsky, Vl., Weber, J., Abrosimov, N. V., Stanley, C. M., Backlund, D. J., Estreicher, S. K. (2020) Identification of the donor and acceptor states of the bond-centered hydrogen–carbon pair in Si and diluted SiGe alloys. Journal of Applied Physics, 127 (4). 45701pp. doi:10.1063/1.5135757
In(2020, January) Journal of Applied Physics Vol. 127 (4) AIP Publishing

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Stübner, R., Scheffler, L., Kolkovsky, Vl., Weber, J. (2016) Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon. Journal of Applied Physics, 119 (20). 205709pp. doi:10.1063/1.4952702
Gwozdz, K., Stübner, R., Kolkovsky, Vl., Weber, J. (2017) Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si. Applied Physics Letters, 111 (3). 32102pp. doi:10.1063/1.4993934
Vincent, T. M., Estreicher, S. K., Weber, J., Kolkovsky, V., Yarykin, N. (2020) The Cu photoluminescence defect and the early stages of Cu precipitation in Si. Journal of Applied Physics, 127 (8). 85704pp. doi:10.1063/1.5140456
Stübner, R., Kolkovsky, Vl., Weber, J. (2015) Two different carbon-hydrogen complexes in silicon with closely spaced energy levels. Journal of Applied Physics, 118 (5). 55704pp. doi:10.1063/1.4928146
Kolkovsky, Vl., Stübner, R., Gwozdz, K., Weber, J. (2018) Carbon-hydrogen-related complexes in Si. Physica B: Condensed Matter, 535. 128-131 doi:10.1016/j.physb.2017.06.085
Gwozdz, K., Kolkovsky, Vl., Kolkovsky, V., Weber, J. (2018) Revised identification of the G-levels in gold doped Si by Laplace deep level transient spectroscopy. Journal of Applied Physics, 124 (1). 15701pp. doi:10.1063/1.5036807
Stübner, Ronald, Kolkovsky, Vladimir, Weber, Jörg, Abrosimov, Nikolay V. (2017) Carbon‐hydrogen related defects in SiGe observed after dc H plasma treatment. physica status solidi (a), 214 (7). 1700329pp. doi:10.1002/pssa.201700329
Scheffler, L., Kolkovsky, Vl., Weber, J. (2015) Identification of titanium-hydrogen complexes with up to four hydrogen atoms in silicon. Journal of Applied Physics, 117 (8). 85707pp. doi:10.1063/1.4913524
Kolkovsky, Vl, Mesli, A, Dobaczewski, L, Abrosimov, N V, Zytkiewicz, Z R, Peaker, A R (2005) Stable and metastable configurations of iron atoms in SiGe alloys. Journal of Physics: Condensed Matter, 17 (22). doi:10.1088/0953-8984/17/22/014
Stübner, R., Kolkovsky, Vl., Leibiger, Gunnar, Habel, Frank, Weber, J. (2014) Preparation of Ag Schottky contacts on n-type GaN bulk crystals grown in nitrogen rich atmosphere by the hydride vapor phase epitaxy technique. Journal of Applied Physics, 116 (14). 143701pp. doi:10.1063/1.4897538
Gibbons, T. M., Backlund, D. J., Estreicher, S. K. (2017) Cobalt-related defects in silicon. Journal of Applied Physics, 121 (4). 45704pp. doi:10.1063/1.4975034
 
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