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Backlund, D. J., Estreicher, S. K. (2010) Structural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si. Physical Review B, 82 (15) doi:10.1103/physrevb.82.155208

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Reference TypeJournal (article/letter/editorial)
TitleStructural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si
JournalPhysical Review B
AuthorsBacklund, D. J.Author
Estreicher, S. K.Author
Year2010 (October 19)Volume82
Issue15
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.82.155208Search in ResearchGate
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Mindat Ref. ID14210042Long-form Identifiermindat:1:5:14210042:6
GUID0
Full ReferenceBacklund, D. J., Estreicher, S. K. (2010) Structural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si. Physical Review B, 82 (15) doi:10.1103/physrevb.82.155208
Plain TextBacklund, D. J., Estreicher, S. K. (2010) Structural, electrical, and vibrational properties of Ti-H and Ni-H complexes in Si. Physical Review B, 82 (15) doi:10.1103/physrevb.82.155208
In(2010, October) Physical Review B Vol. 82 (15) American Physical Society (APS)

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Backlund, D. J., Estreicher, S. K. (2010) Ti, Fe, and Ni in Si and their interactions with the vacancy and theAcenter: A theoretical study. Physical Review B, 81 (23) doi:10.1103/physrevb.81.235213
McAfee, J. L., Ren, He, Estreicher, S. K. (2004) Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si. Physical Review B, 69 (16) doi:10.1103/physrevb.69.165206
Carvalho, A., Backlund, D. J., Estreicher, S. K. (2011) Four-copper complexes in Si and the Cu-photoluminescence defect: A first-principles study. Physical Review B, 84 (15) doi:10.1103/physrevb.84.155322
Backlund, D. J., Estreicher, S. K. (2008) C4 defect and its precursors in Si: First-principles theory. Physical Review B, 77 (20) doi:10.1103/physrevb.77.205205
Backlund, D. J., Gibbons, T. M., Estreicher, S. K. (2016) Vanadium interactions in crystalline silicon. Physical Review B, 94 (19) doi:10.1103/physrevb.94.195210
Chu, C. H., Estreicher, S. K. (1990) Similarities, differences, and trends in the properties of interstitial H in cubic C, Si, BN, BP, AlP, and SiC. Physical Review B, 42 (15) 9486-9495 doi:10.1103/physrevb.42.9486
McAfee, J.L., Estreicher, S.K. (2003) Structural and vibrational properties of Cs and {Cs,H,H} complexes in Si. Physica B: Condensed Matter, 340. 637-640 doi:10.1016/j.physb.2003.09.159
Estreicher, S. K., Docaj, A., Bebek, M. B., Backlund, D. J., Stavola, M. (2012) Hydrogen in C-rich Si and the diffusion of vacancy-H complexes. physica status solidi (a), 209 (10). 1872-1879 doi:10.1002/pssa.201200054
Maric, Dj. M., Meier, P. F., Estreicher, S. K. (1993) {H,B}, {H,C}, and {H,Si} pairs in silicon and germanium. Physical Review B, 47 (7) 3620-3625 doi:10.1103/physrevb.47.3620
West, D., Estreicher, S. K. (2007) Isotope dependence of the vibrational lifetimes of light impurities in Si from first principles. Physical Review B, 75 (7) doi:10.1103/physrevb.75.075206
Estreicher, Stefan K. (1990) Interstitial O in Si and its interactions with H. Physical Review B, 41 (14) 9886-9891 doi:10.1103/physrevb.41.9886
 
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