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Consonni, V., Hanke, M., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2011) Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer. Physical Review B, 83 (3) doi:10.1103/physrevb.83.035310

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Reference TypeJournal (article/letter/editorial)
TitleNucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
JournalPhysical Review B
AuthorsConsonni, V.Author
Hanke, M.Author
Knelangen, M.Author
Geelhaar, L.Author
Trampert, A.Author
Riechert, H.Author
Year2011 (January 18)Volume83
Issue3
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.83.035310Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14214310Long-form Identifiermindat:1:5:14214310:2
GUID0
Full ReferenceConsonni, V., Hanke, M., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2011) Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer. Physical Review B, 83 (3) doi:10.1103/physrevb.83.035310
Plain TextConsonni, V., Hanke, M., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2011) Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer. Physical Review B, 83 (3) doi:10.1103/physrevb.83.035310
In(2011, January) Physical Review B Vol. 83 (3) American Physical Society (APS)

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Consonni, V., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2010) Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius. Physical Review B, 81 (8) doi:10.1103/physrevb.81.085310
Consonni, V., Knelangen, M., Trampert, A., Geelhaar, L., Riechert, H. (2011) Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy. Applied Physics Letters, 98 (7). 71913pp. doi:10.1063/1.3555450
Consonni, V., Dubrovskii, V. G., Trampert, A., Geelhaar, L., Riechert, H. (2012) Quantitative description for the growth rate of self-induced GaN nanowires. Physical Review B, 85 (15) doi:10.1103/physrevb.85.155313
Consonni, V., Trampert, A., Geelhaar, L., Riechert, H. (2011) Physical origin of the incubation time of self-induced GaN nanowires. Applied Physics Letters, 99 (3). 33102pp. doi:10.1063/1.3610964
Dubrovskii, Vladimir G., Consonni, Vincent, Trampert, Achim, Geelhaar, Lutz, Riechert, Henning (2012) Scaling thermodynamic model for the self-induced nucleation of GaN nanowires. Physical Review B, 85 (16) doi:10.1103/physrevb.85.165317
Dubrovskii, Vladimir G., Consonni, Vincent, Trampert, Achim, Geelhaar, Lutz, Riechert, Henning (2012) Publisher's Note: Scaling thermodynamic model for the self-induced nucleation of GaN nanowires [Phys. Rev. B85, 165317 (2012)]. Physical Review B, 85 (19) doi:10.1103/physrevb.85.199901
Consonni, V., Knelangen, M., Jahn, U., Trampert, A., Geelhaar, L., Riechert, H. (2009) Effects of nanowire coalescence on their structural and optical properties on a local scale. Applied Physics Letters, 95 (24). 241910pp. doi:10.1063/1.3275793
Breuer, S., Hilse, M., Trampert, A., Geelhaar, L., Riechert, H. (2010) Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires. Physical Review B, 82 (7) doi:10.1103/physrevb.82.075406
Dubrovskii, Vladimir G., Consonni, Vincent, Geelhaar, Lutz, Trampert, Achim, Riechert, Henning (2012) Scaling growth kinetics of self-induced GaN nanowires. Applied Physics Letters, 100 (15). 153101pp. doi:10.1063/1.3701591
Chèze, C., Geelhaar, L., Trampert, A., Riechert, H. (2010) In situ investigation of self-induced GaN nanowire nucleation on Si. Applied Physics Letters, 97 (4). 43101pp. doi:10.1063/1.3464956
Kaganer, V. M., Wölz, M., Brandt, O., Geelhaar, L., Riechert, H. (2011) X-ray diffraction profiles from axial nanowire heterostructures. Physical Review B, 83 (24) doi:10.1103/physrevb.83.245321
 
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