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Chèze, C., Geelhaar, L., Trampert, A., Riechert, H. (2010) In situ investigation of self-induced GaN nanowire nucleation on Si. Applied Physics Letters, 97 (4). 43101pp. doi:10.1063/1.3464956

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Reference TypeJournal (article/letter/editorial)
TitleIn situ investigation of self-induced GaN nanowire nucleation on Si
JournalApplied Physics Letters
AuthorsChèze, C.Author
Geelhaar, L.Author
Trampert, A.Author
Riechert, H.Author
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3464956Search in ResearchGate
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Mindat Ref. ID8589768Long-form Identifiermindat:1:5:8589768:3
GUID0
Full ReferenceChèze, C., Geelhaar, L., Trampert, A., Riechert, H. (2010) In situ investigation of self-induced GaN nanowire nucleation on Si. Applied Physics Letters, 97 (4). 43101pp. doi:10.1063/1.3464956
Plain TextChèze, C., Geelhaar, L., Trampert, A., Riechert, H. (2010) In situ investigation of self-induced GaN nanowire nucleation on Si. Applied Physics Letters, 97 (4). 43101pp. doi:10.1063/1.3464956
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Chèze, C., Geelhaar, L., Jenichen, B., Riechert, H. (2010) Different growth rates for catalyst-induced and self-induced GaN nanowires. Applied Physics Letters, 97 (15). 153105pp. doi:10.1063/1.3488010
Consonni, V., Knelangen, M., Trampert, A., Geelhaar, L., Riechert, H. (2011) Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy. Applied Physics Letters, 98 (7). 71913pp. doi:10.1063/1.3555450
Consonni, V., Trampert, A., Geelhaar, L., Riechert, H. (2011) Physical origin of the incubation time of self-induced GaN nanowires. Applied Physics Letters, 99 (3). 33102pp. doi:10.1063/1.3610964
Consonni, V., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2010) Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius. Physical Review B, 81 (8) doi:10.1103/physrevb.81.085310
Dubrovskii, Vladimir G., Consonni, Vincent, Geelhaar, Lutz, Trampert, Achim, Riechert, Henning (2012) Scaling growth kinetics of self-induced GaN nanowires. Applied Physics Letters, 100 (15). 153101pp. doi:10.1063/1.3701591
Consonni, V., Hanke, M., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2011) Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer. Physical Review B, 83 (3) doi:10.1103/physrevb.83.035310
Geelhaar, L., Chèze, C., Weber, W. M., Averbeck, R., Riechert, H., Kehagias, Th., Komninou, Ph., Dimitrakopulos, G. P., Karakostas, Th. (2007) Axial and radial growth of Ni-induced GaN nanowires. Applied Physics Letters, 91 (9). 93113pp. doi:10.1063/1.2776979
Consonni, V., Knelangen, M., Jahn, U., Trampert, A., Geelhaar, L., Riechert, H. (2009) Effects of nanowire coalescence on their structural and optical properties on a local scale. Applied Physics Letters, 95 (24). 241910pp. doi:10.1063/1.3275793
Breuer, S., Hilse, M., Trampert, A., Geelhaar, L., Riechert, H. (2010) Vapor-liquid-solid nucleation of GaAs on Si(111): Growth evolution from traces to nanowires. Physical Review B, 82 (7) doi:10.1103/physrevb.82.075406
Dubrovskii, Vladimir G., Consonni, Vincent, Trampert, Achim, Geelhaar, Lutz, Riechert, Henning (2012) Scaling thermodynamic model for the self-induced nucleation of GaN nanowires. Physical Review B, 85 (16) doi:10.1103/physrevb.85.165317
Consonni, V., Dubrovskii, V. G., Trampert, A., Geelhaar, L., Riechert, H. (2012) Quantitative description for the growth rate of self-induced GaN nanowires. Physical Review B, 85 (15) doi:10.1103/physrevb.85.155313
 
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