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Chèze, C., Geelhaar, L., Jenichen, B., Riechert, H. (2010) Different growth rates for catalyst-induced and self-induced GaN nanowires. Applied Physics Letters, 97 (15). 153105pp. doi:10.1063/1.3488010

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Reference TypeJournal (article/letter/editorial)
TitleDifferent growth rates for catalyst-induced and self-induced GaN nanowires
JournalApplied Physics Letters
AuthorsChèze, C.Author
Geelhaar, L.Author
Jenichen, B.Author
Riechert, H.Author
Year2010 (October 11)Volume97
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.3488010Search in ResearchGate
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Mindat Ref. ID8587172Long-form Identifiermindat:1:5:8587172:8
GUID0
Full ReferenceChèze, C., Geelhaar, L., Jenichen, B., Riechert, H. (2010) Different growth rates for catalyst-induced and self-induced GaN nanowires. Applied Physics Letters, 97 (15). 153105pp. doi:10.1063/1.3488010
Plain TextChèze, C., Geelhaar, L., Jenichen, B., Riechert, H. (2010) Different growth rates for catalyst-induced and self-induced GaN nanowires. Applied Physics Letters, 97 (15). 153105pp. doi:10.1063/1.3488010
In(2010, October) Applied Physics Letters Vol. 97 (15) AIP Publishing

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Chèze, C., Geelhaar, L., Trampert, A., Riechert, H. (2010) In situ investigation of self-induced GaN nanowire nucleation on Si. Applied Physics Letters, 97 (4). 43101pp. doi:10.1063/1.3464956
Geelhaar, L., Chèze, C., Weber, W. M., Averbeck, R., Riechert, H., Kehagias, Th., Komninou, Ph., Dimitrakopulos, G. P., Karakostas, Th. (2007) Axial and radial growth of Ni-induced GaN nanowires. Applied Physics Letters, 91 (9). 93113pp. doi:10.1063/1.2776979
Dubrovskii, Vladimir G., Consonni, Vincent, Geelhaar, Lutz, Trampert, Achim, Riechert, Henning (2012) Scaling growth kinetics of self-induced GaN nanowires. Applied Physics Letters, 100 (15). 153101pp. doi:10.1063/1.3701591
Consonni, V., Trampert, A., Geelhaar, L., Riechert, H. (2011) Physical origin of the incubation time of self-induced GaN nanowires. Applied Physics Letters, 99 (3). 33102pp. doi:10.1063/1.3610964
Wölz, M., Kaganer, V. M., Brandt, O., Geelhaar, L., Riechert, H. (2011) Analyzing the growth of InxGa1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction. Applied Physics Letters, 98 (26). 261907pp. doi:10.1063/1.3604810
Consonni, V., Dubrovskii, V. G., Trampert, A., Geelhaar, L., Riechert, H. (2012) Quantitative description for the growth rate of self-induced GaN nanowires. Physical Review B, 85 (15) doi:10.1103/physrevb.85.155313
Wölz, M., Kaganer, V. M., Brandt, O., Geelhaar, L., Riechert, H. (2012) Erratum: “Analyzing the growth of InxGa1−xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction” [Appl. Phys. Lett. 98, 261907 (2011)]. Applied Physics Letters, 100 (17). 179902pp. doi:10.1063/1.4705374
Consonni, V., Knelangen, M., Trampert, A., Geelhaar, L., Riechert, H. (2011) Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy. Applied Physics Letters, 98 (7). 71913pp. doi:10.1063/1.3555450
Consonni, V., Knelangen, M., Geelhaar, L., Trampert, A., Riechert, H. (2010) Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius. Physical Review B, 81 (8) doi:10.1103/physrevb.81.085310
Kehagias, Th., Komninou, Ph., Dimitrakopulos, G. P., Chèze, C., Geelhaar, L., Riechert, H., Karakostas, Th. (2008) Atomic-scale configuration of catalyst particles on GaN nanowires. physica status solidi (c), 5 (12). 3716-3719 doi:10.1002/pssc.200780135
Gorgis, A., Flissikowski, T., Brandt, O., Chèze, C., Geelhaar, L., Riechert, H., Grahn, H. T. (2012) Time-resolved photoluminescence spectroscopy of individual GaN nanowires. Physical Review B, 86 (4) doi:10.1103/physrevb.86.041302
 
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