| Reference Type | Journal (article/letter/editorial) |
|---|
| Title | Tuning deep dopants to shallow ones in 2D semiconductors by substrate screening: The case of
XS
(X = Cl, Br, I) in
MoS2 |
|---|
| Journal | Physical Review B |
|---|
| Authors | Ma, Jie | Author |
|---|
| Yu, Zhi Gen | Author |
| Zhang, Yong-Wei | Author |
| Year | 2017 (April 28) | Volume | 95 |
|---|
| Issue | 16 |
|---|
| Publisher | American Physical Society (APS) |
|---|
| DOI | doi:10.1103/physrevb.95.165447Search in ResearchGate |
|---|
| Generate Citation Formats |
|---|
| Mindat Ref. ID | 14245841 | Long-form Identifier | mindat:1:5:14245841:1 |
|---|
|
| GUID | 0 |
|---|
| Full Reference | Ma, Jie, Yu, Zhi Gen, Zhang, Yong-Wei (2017) Tuning deep dopants to shallow ones in 2D semiconductors by substrate screening: The case of
XS
(X = Cl, Br, I) in
MoS2. Physical Review B, 95 (16) doi:10.1103/physrevb.95.165447 |
|---|
| Plain Text | Ma, Jie, Yu, Zhi Gen, Zhang, Yong-Wei (2017) Tuning deep dopants to shallow ones in 2D semiconductors by substrate screening: The case of
XS
(X = Cl, Br, I) in
MoS2. Physical Review B, 95 (16) doi:10.1103/physrevb.95.165447 |
|---|
| In | (2017, April) Physical Review B Vol. 95 (16) American Physical Society (APS) |
|---|
These are possibly similar items as determined by title/reference text matching only.
