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KAMINS, T. I., MANDURAH, M. M., SARASWAT, K. C. (1978) ChemInform Abstract: STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS. Chemischer Informationsdienst, 9 (38) doi:10.1002/chin.197838014

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Reference TypeJournal (article/letter/editorial)
TitleChemInform Abstract: STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS
JournalChemischer Informationsdienst
AuthorsKAMINS, T. I.Author
MANDURAH, M. M.Author
SARASWAT, K. C.Author
Year1978 (September 19)Volume9
Issue38
PublisherWiley
DOIdoi:10.1002/chin.197838014Search in ResearchGate
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Mindat Ref. ID14779154Long-form Identifiermindat:1:5:14779154:4
GUID0
Full ReferenceKAMINS, T. I., MANDURAH, M. M., SARASWAT, K. C. (1978) ChemInform Abstract: STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS. Chemischer Informationsdienst, 9 (38) doi:10.1002/chin.197838014
Plain TextKAMINS, T. I., MANDURAH, M. M., SARASWAT, K. C. (1978) ChemInform Abstract: STRUCTURE AND STABILITY OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS. Chemischer Informationsdienst, 9 (38) doi:10.1002/chin.197838014
In(1978, September) Chemischer Informationsdienst Vol. 9 (38) Wiley

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MANDURAH, M. M., SARASWAT, K. C., KAMINS, T. I. (1979) ChemInform Abstract: PHOSPHORUS DOPING OF LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS. Chemischer Informationsdienst, 10 (42) doi:10.1002/chin.197942005
Kamins, T. I. (1978) Structure and Stability of Low Pressure Chemically Vapor-Deposited Silicon Films. Journal of the Electrochemical Society, 125. 927pp. doi:10.1149/1.2131593
GREEN, M. L., LEVY, R. A. (1985) ChemInform Abstract: STRUCTURE OF SELECTIVE LOW PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN. Chemischer Informationsdienst, 16 (38) doi:10.1002/chin.198538003
Mandurah, M. M. (1979) Phosphorus Doping of Low Pressure Chemically Vapor-Deposited Silicon Films. Journal of the Electrochemical Society, 126. 1019pp. doi:10.1149/1.2129167
Mandurah, M. M., Saraswat, K. C., Kamins, T. I. (1980) Arsenic segregation in polycrystalline silicon. Applied Physics Letters, 36 (8). 683-685 doi:10.1063/1.91623
KAMINS, T. I. (1980) ChemInform Abstract: STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS. Chemischer Informationsdienst, 11 (28) doi:10.1002/chin.198028020
DONG, D., IRENE, E. A., YOUNG, D. R. (1978) ChemInform Abstract: PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SILICON-RICH SILICON DIOXIDE AND SILICON NITRIDE FILMS. Chemischer Informationsdienst, 9 (34) doi:10.1002/chin.197834043
HIRAGA, K., HIRABAYASHI, M., HAYASHI, S., HIRAI, T. (1983) ChemInform Abstract: HIGH-RESOLUTION ELECTRON MICROSCOPY OF CHEMICALLY VAPOR-DEPOSITED β-SILICON NITRIDE-TITANIUM NITRIDE COMPOSITES. Chemischer Informationsdienst, 14 (45) doi:10.1002/chin.198345006
KAMINS, T. I. (1974) ChemInform Abstract: DEFORMATION OCCURRING DURING THE DEPOSITION OF POLYCRYSTALLINE SILICON FILMS. Chemischer Informationsdienst, 5 (32) doi:10.1002/chin.197432047
DONAHUE, T. J., REIF, R. (1986) ChemInform Abstract: Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. Chemischer Informationsdienst, 17 (47) doi:10.1002/chin.198647379
KAMINS, T. I. (1974) ChemInform Abstract: DIFFUSION IN THIN SILICON FILMS FORMED BY ELECTROCHEMICAL ETCHING. Chemischer Informationsdienst, 5 (21) doi:10.1002/chin.197421009
 
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