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Tarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo, Nagai, Kiyoko (1966) Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition. Japanese Journal of Applied Physics, 5 (4) 275-288 doi:10.1143/jjap.5.275

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Reference TypeJournal (article/letter/editorial)
TitleSurface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition
JournalJapanese Journal of Applied Physics
AuthorsTarui, YasuoAuthor
Komiya, YoshioAuthor
Teshima, HirooAuthor
Nagai, KiyokoAuthor
Year1966 (April)Volume5
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.275Search in ResearchGate
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Mindat Ref. ID14976520Long-form Identifiermindat:1:5:14976520:8
GUID0
Full ReferenceTarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo, Nagai, Kiyoko (1966) Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition. Japanese Journal of Applied Physics, 5 (4) 275-288 doi:10.1143/jjap.5.275
Plain TextTarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo, Nagai, Kiyoko (1966) Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition. Japanese Journal of Applied Physics, 5 (4) 275-288 doi:10.1143/jjap.5.275
In(1966, April) Japanese Journal of Applied Physics Vol. 5 (4) Japan Society of Applied Physics

See Also

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Miura, Yoshio, Matukura, Yasuo (1966) Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure. Japanese Journal of Applied Physics, 5 (2) 180 doi:10.1143/jjap.5.180
Tarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo (1967) The Built-in Voltage and the Charge Distributions in the Oxide of MOS Structure. Japanese Journal of Applied Physics, 6 (2) 191-204 doi:10.1143/jjap.6.191
Tarui, Yasuo, Hidaka, Junichi, Aota, Katsumi (1984) Low-Temperature Growth of Silicon Dioxide Film by Photo-Chemical Vapor Deposition. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l827
Komiya, Yoshio, Tarui, Yasuo (1969) Comparison between the Experimental and Theoretical Sodium Distribution in Silicon Oxide. Japanese Journal of Applied Physics, 8 (2) 272 doi:10.1143/jjap.8.272
Miura, Yoshio (1965) Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface. Japanese Journal of Applied Physics, 4 (12) 958-961 doi:10.1143/jjap.4.958
Komiya, Yoshio, Hoh, Koichiro, Murakami, Koichi, Takahashi, Tetsuo, Tarui, Yasuo (1981) Pattern Laser Annealing by a Pulsed Laser. Japanese Journal of Applied Physics, 20 (10) doi:10.1143/jjap.20.l749
Matukura, Yasuo, Miura, Yoshio (1963) Dislocations in Epitaxially Grown Silicon. Japanese Journal of Applied Physics, 2 (8) 518-519 doi:10.1143/jjap.2.518
Sawado, Yoshinori, Akiyama, Takeshi, Ueno, Tomo, Kamisako, Koichi, Kuroiwa, Koichi, Tarui, Yasuo (1994) Contributions of Silicon-Hydride Radicals to Hydrogenated Amorphous Silicon Film Formation in Windowless Photochemical Vapor Deposition System. Japanese Journal of Applied Physics, 33. 950-955 doi:10.1143/jjap.33.950
Maruyama, Toshiro, Shionoya, Jun (1989) Silicon Dioxide Thin Films Prepared by Chemical Vapor Deposition from Silicon Tetraacetate. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2253
Nishi, Yoshio (1966) Electron Spin Resonance in SiO2Grown on Silicon. Japanese Journal of Applied Physics, 5 (4) 333 doi:10.1143/jjap.5.333
Nagai, Kiyoko, Hayashi, Yutaka, Tarui, Yasuo (1976) Carrier Injection into SiO2from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO2. Japanese Journal of Applied Physics, 15 (2) 409 doi:10.1143/jjap.15.409a
 
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