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Miura, Yoshio, Matukura, Yasuo (1966) Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure. Japanese Journal of Applied Physics, 5 (2) 180 doi:10.1143/jjap.5.180

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of Silicon-Silicon Dioxide Interface Using MOS Structure
JournalJapanese Journal of Applied Physics
AuthorsMiura, YoshioAuthor
Matukura, YasuoAuthor
Year1966 (February)Volume5
Issue2
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.180Search in ResearchGate
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Mindat Ref. ID14976480Long-form Identifiermindat:1:5:14976480:5
GUID0
Full ReferenceMiura, Yoshio, Matukura, Yasuo (1966) Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure. Japanese Journal of Applied Physics, 5 (2) 180 doi:10.1143/jjap.5.180
Plain TextMiura, Yoshio, Matukura, Yasuo (1966) Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure. Japanese Journal of Applied Physics, 5 (2) 180 doi:10.1143/jjap.5.180
In(1966, February) Japanese Journal of Applied Physics Vol. 5 (2) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Miura, Yoshio, Matukura, Yasuo (1967) Instabilities of MOS Structure. Japanese Journal of Applied Physics, 6 (5) 582-588 doi:10.1143/jjap.6.582
Matukura, Yasuo, Miura, Yoshio (1963) Dislocations in Epitaxially Grown Silicon. Japanese Journal of Applied Physics, 2 (8) 518-519 doi:10.1143/jjap.2.518
Tarui, Yasuo, Komiya, Yoshio, Teshima, Hiroo, Nagai, Kiyoko (1966) Surface States of Silicon-Silicon Dioxide Interface Grown by Vapor Deposition. Japanese Journal of Applied Physics, 5 (4) 275-288 doi:10.1143/jjap.5.275
Miura, Yoshio (1965) Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface. Japanese Journal of Applied Physics, 4 (12) 958-961 doi:10.1143/jjap.4.958
Matukura, Yasuo, Miura, Yoshio (1965) Minority Carrier Lifetime in Uniaxially Stressed Germanium. Japanese Journal of Applied Physics, 4 (1) 72-73 doi:10.1143/jjap.4.72
Nishi, Yoshio, Konaka, Masami (1966) Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor. Japanese Journal of Applied Physics, 5 (11) 1116 doi:10.1143/jjap.5.1116
Matukura, Yasuo, Oda, Jyoji, Koreeda, Syoiti (1965) Anomalous Diffusion of Boron into Silicon Grain Boundary. Japanese Journal of Applied Physics, 4 (12) 1022-1023 doi:10.1143/jjap.4.1022
Nishi, Yoshio (1971) Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I. Japanese Journal of Applied Physics, 10 (1) 52-62 doi:10.1143/jjap.10.52
Tanaka, Masayasu, Ueno, Hiroaki, Matsushima, Osamu, Miura-Mattausch, Mitiko (2003) High-Electric-Field Electron Transport at Silicon/Silicon-Dioxide Interface Inversion Layer. Japanese Journal of Applied Physics, 42. doi:10.1143/jjap.42.l280
Nishi, Yoshio (1966) Electron Spin Resonance in SiO2Grown on Silicon. Japanese Journal of Applied Physics, 5 (4) 333 doi:10.1143/jjap.5.333
Nishi, Yoshio, Tanaka, Kiyoshi, Ohwada, Atsushi (1972) Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II. Japanese Journal of Applied Physics, 11 (1) 85-91 doi:10.1143/jjap.11.85
 
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