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Nishi, Yoshio, Konaka, Masami (1966) Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor. Japanese Journal of Applied Physics, 5 (11) 1116 doi:10.1143/jjap.5.1116

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor
JournalJapanese Journal of Applied Physics
AuthorsNishi, YoshioAuthor
Konaka, MasamiAuthor
Year1966 (November)Volume5
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.1116Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14976426Long-form Identifiermindat:1:5:14976426:3
GUID0
Full ReferenceNishi, Yoshio, Konaka, Masami (1966) Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor. Japanese Journal of Applied Physics, 5 (11) 1116 doi:10.1143/jjap.5.1116
Plain TextNishi, Yoshio, Konaka, Masami (1966) Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor. Japanese Journal of Applied Physics, 5 (11) 1116 doi:10.1143/jjap.5.1116
In(1966, November) Japanese Journal of Applied Physics Vol. 5 (11) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Konaka, Masami, Abe, Toshio, Sato, Kanro (1968) Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier. Japanese Journal of Applied Physics, 7 (8) 968 doi:10.1143/jjap.7.968
Konaka, Masami, Abe, Toshio, Sato, Kanro (1968) Non-Destructive Determination of Impurity Concentration in Silicon Epitaxial Layer Using Metal-Silicon Schottky Barrier. Japanese Journal of Applied Physics, 7 (7) 790-791 doi:10.1143/jjap.7.790
Miura, Yoshio, Matukura, Yasuo (1966) Investigation of Silicon-Silicon Dioxide Interface Using MOS Structure. Japanese Journal of Applied Physics, 5 (2) 180 doi:10.1143/jjap.5.180
Nishi, Yoshio (1966) Electron Spin Resonance in SiO2Grown on Silicon. Japanese Journal of Applied Physics, 5 (4) 333 doi:10.1143/jjap.5.333
Abe, Toshio, Kato, Taketoshi, Nishi, Yoshio (1964) On the Distribution of Impurities in Epitaxial Silicon Films. Japanese Journal of Applied Physics, 3 (3) 161-162 doi:10.1143/jjap.3.161
Nishi, Yoshio, Watanabe, Masaharu (1967) Epitaxial Deposition of Silicon by Pyrolysis of SiH4. Japanese Journal of Applied Physics, 6 (4) 550-551 doi:10.1143/jjap.6.550
Konaka, Masami, Iwai, Hiroshi, Nishi, Yoshio (1979) Suppression of Anomalous Drain Current in Short Channel MOSFET. Japanese Journal of Applied Physics, 18. 27 doi:10.7567/jjaps.18s1.27
Tachikawa, Masami, Mori, Hidefumi, Sugo, Mitsuru, Itoh, Yoshio (1993) Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy. Japanese Journal of Applied Physics, 32. doi:10.1143/jjap.32.l1252
Nishi, Yoshio, Tanaka, Kiyoshi, Ohwada, Atsushi (1972) Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II. Japanese Journal of Applied Physics, 11 (1) 85-91 doi:10.1143/jjap.11.85
Kato, Taketoshi, Nishi, Yoshio (1965) Redistribution of Diffused Boron in Silicon by Thermal Oxidation. Japanese Journal of Applied Physics, 4 (1) 76 doi:10.1143/jjap.4.76a
Nishi, Yoshio (1971) Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I. Japanese Journal of Applied Physics, 10 (1) 52-62 doi:10.1143/jjap.10.52
 
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