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Nishi, Yoshio, Watanabe, Masaharu (1967) Epitaxial Deposition of Silicon by Pyrolysis of SiH4. Japanese Journal of Applied Physics, 6 (4) 550-551 doi:10.1143/jjap.6.550

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Deposition of Silicon by Pyrolysis of SiH4
JournalJapanese Journal of Applied Physics
AuthorsNishi, YoshioAuthor
Watanabe, MasaharuAuthor
Year1967 (April)Volume6
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.550Search in ResearchGate
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Mindat Ref. ID14976876Long-form Identifiermindat:1:5:14976876:6
GUID0
Full ReferenceNishi, Yoshio, Watanabe, Masaharu (1967) Epitaxial Deposition of Silicon by Pyrolysis of SiH4. Japanese Journal of Applied Physics, 6 (4) 550-551 doi:10.1143/jjap.6.550
Plain TextNishi, Yoshio, Watanabe, Masaharu (1967) Epitaxial Deposition of Silicon by Pyrolysis of SiH4. Japanese Journal of Applied Physics, 6 (4) 550-551 doi:10.1143/jjap.6.550
In(1967, April) Japanese Journal of Applied Physics Vol. 6 (4) Japan Society of Applied Physics

See Also

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Katoh, Kazuhisa, Yasui, Masaru, Watanabe, Hideo (1983) Plasma-Enhanced Deposition of Silicon Nitride from SiH4-N2Mixture. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l321
Nishi, Yoshio, Konaka, Masami (1966) Determination of Impurity Distribution in Silicon Epitaxial Film Using MOS Capacitor. Japanese Journal of Applied Physics, 5 (11) 1116 doi:10.1143/jjap.5.1116
Kato, Taketoshi, Nishi, Yoshio (1965) Redistribution of Diffused Boron in Silicon by Thermal Oxidation. Japanese Journal of Applied Physics, 4 (1) 76 doi:10.1143/jjap.4.76a
Nishi, Yoshio (1966) Electron Spin Resonance in SiO2Grown on Silicon. Japanese Journal of Applied Physics, 5 (4) 333 doi:10.1143/jjap.5.333
Abe, Toshio, Kato, Taketoshi, Nishi, Yoshio (1964) On the Distribution of Impurities in Epitaxial Silicon Films. Japanese Journal of Applied Physics, 3 (3) 161-162 doi:10.1143/jjap.3.161
Nishi, Yoshio (1971) Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I. Japanese Journal of Applied Physics, 10 (1) 52-62 doi:10.1143/jjap.10.52
Furukawa, Yoshitaka (1967) Epitaxial Growth of Gallium Arsenide by Using Silicon Tetrachloride. Japanese Journal of Applied Physics, 6 (11) 1344 doi:10.1143/jjap.6.1344
Watanabe, Yoshio, Yoshida, Masayuki (1967) Measurement of the Distribution of Phosphorus Diffused in Silicon Dioxide Film Using32P as a Tracer. Japanese Journal of Applied Physics, 6 (3) 410 doi:10.1143/jjap.6.410
Kato, Taketoshi, Nishi, Yoshio (1964) Redistribution of Diffused Boron in Silicon by Thermal Oxidation. Japanese Journal of Applied Physics, 3 (7) 377-383 doi:10.1143/jjap.3.377
Tsuji, Masaharu, Itoh, Naoki, Nishimura, Yukio (1991) Deposition of SiO2Films from ArF Laser Photolysis of SiH4/N2O Mixtures. Japanese Journal of Applied Physics, 30. 2868-2872 doi:10.1143/jjap.30.2868
Nishi, Yoshio, Tanaka, Kiyoshi, Ohwada, Atsushi (1972) Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II. Japanese Journal of Applied Physics, 11 (1) 85-91 doi:10.1143/jjap.11.85
 
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