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Arizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro (1966) Thermodynamics of Vapor Growth of ZnSe-Ge-I2System in Closed Tube Process. Japanese Journal of Applied Physics, 5 (7) 588-592 doi:10.1143/jjap.5.588

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Reference TypeJournal (article/letter/editorial)
TitleThermodynamics of Vapor Growth of ZnSe-Ge-I2System in Closed Tube Process
JournalJapanese Journal of Applied Physics
AuthorsArizumi, TetsuyaAuthor
Nishinaga, TatauAuthor
Kakehi, MasahiroAuthor
Year1966 (July)Volume5
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.5.588Search in ResearchGate
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Mindat Ref. ID14976592Long-form Identifiermindat:1:5:14976592:5
GUID0
Full ReferenceArizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro (1966) Thermodynamics of Vapor Growth of ZnSe-Ge-I2System in Closed Tube Process. Japanese Journal of Applied Physics, 5 (7) 588-592 doi:10.1143/jjap.5.588
Plain TextArizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro (1966) Thermodynamics of Vapor Growth of ZnSe-Ge-I2System in Closed Tube Process. Japanese Journal of Applied Physics, 5 (7) 588-592 doi:10.1143/jjap.5.588
In(1966, July) Japanese Journal of Applied Physics Vol. 5 (7) Japan Society of Applied Physics

See Also

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Arizumi, Tetsuya, Nishinaga, Tatau (1966) Thermodynamical Consideration for the Preparation of GaAs-Ge Heterojunctions through Closed Tube Process. Japanese Journal of Applied Physics, 5 (1) 21-28 doi:10.1143/jjap.5.21
Arizumi, Tetsuya, Nishinaga, Tatau (1965) Transport Reaction in Closed Tube Process. Japanese Journal of Applied Physics, 4 (3) 165-172 doi:10.1143/jjap.4.165
Arizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro (1968) Sheet Resistivity of the Epitaxially Grown Germanium Layer. Japanese Journal of Applied Physics, 7 (5) 468-475 doi:10.1143/jjap.7.468
Arizumi, Tetsuya, Akasaki, Isamu, Nishinaga, Tatau (1964) Experimental Studies of Impurity Doping in Vapor Growth of Ge. Japanese Journal of Applied Physics, 3 (3) 174 doi:10.1143/jjap.3.174b
Arizumi, Tetsuya, Akasaki, Isamu, Nishinaga, Tatau (1963) Experimental Studies of Impurity Doping in Vapor Growth of Ge. Japanese Journal of Applied Physics, 2 (12) 757-764 doi:10.1143/jjap.2.757
Kakehi, Masahiro, Shimokawa, Ryuichi, Arizumi, Tetsuya (1970) Epitaxial Vapor Growth of Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1039-1044 doi:10.1143/jjap.9.1039
Ido, Toshiyuki, Kakehi, Masahiro, Arizumi, Tetsuya (1971) Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique. Japanese Journal of Applied Physics, 10 (10) 1388-1395 doi:10.1143/jjap.10.1388
Arizumi, Tetsuya, Akasaki, Isamu (1964) A Supplement to “Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge”. Japanese Journal of Applied Physics, 3 (7) 430 doi:10.1143/jjap.3.430b
Arizumi, Tetsuya, Nishinaga, Tatau, Ogawa, Hiroshi (1968) Thermodynamical Analyses and Experiments for the Preparation of Silicon Nitride. Japanese Journal of Applied Physics, 7 (9) 1021-1027 doi:10.1143/jjap.7.1021
Arizumi, Tetsuya, Akasaki, Isamu (1963) Thermodynamics of Impurity Doping Reactions in Vapor Growth of Ge. Japanese Journal of Applied Physics, 2 (10) 602-612 doi:10.1143/jjap.2.602
Ogawa, Hiroshi, Nishinaga, Tatau, Arizumi, Tetsuya (1974) A Continuous Epitaxial Growth of Silicon by Passing Wafers through a Stational Reactor. Japanese Journal of Applied Physics, 13 (4) 594-598 doi:10.1143/jjap.13.594
 
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