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Kakehi, Masahiro, Shimokawa, Ryuichi, Arizumi, Tetsuya (1970) Epitaxial Vapor Growth of Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1039-1044 doi:10.1143/jjap.9.1039

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Vapor Growth of Gallium Antimonide
JournalJapanese Journal of Applied Physics
AuthorsKakehi, MasahiroAuthor
Shimokawa, RyuichiAuthor
Arizumi, TetsuyaAuthor
Year1970 (September)Volume9
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1039Search in ResearchGate
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Mindat Ref. ID14978093Long-form Identifiermindat:1:5:14978093:5
GUID0
Full ReferenceKakehi, Masahiro, Shimokawa, Ryuichi, Arizumi, Tetsuya (1970) Epitaxial Vapor Growth of Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1039-1044 doi:10.1143/jjap.9.1039
Plain TextKakehi, Masahiro, Shimokawa, Ryuichi, Arizumi, Tetsuya (1970) Epitaxial Vapor Growth of Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1039-1044 doi:10.1143/jjap.9.1039
In(1970, September) Japanese Journal of Applied Physics Vol. 9 (9) Japan Society of Applied Physics

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Arizumi, Tetsuya, Kakehi, Masahiro, Shimokawa, Ryuichi (1971) Epitaxial vapor growth of gallium antimonide. Journal of Crystal Growth, 9. 151-157 doi:10.1016/0022-0248(71)90224-7
Arizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro (1966) Thermodynamics of Vapor Growth of ZnSe-Ge-I2System in Closed Tube Process. Japanese Journal of Applied Physics, 5 (7) 588-592 doi:10.1143/jjap.5.588
Ido, Toshiyuki, Kakehi, Masahiro, Arizumi, Tetsuya (1971) Preparation and Electrical Properties of GaSb-Ge Heterojunctions by Vapor Growth Technique. Japanese Journal of Applied Physics, 10 (10) 1388-1395 doi:10.1143/jjap.10.1388
Arizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro (1968) Sheet Resistivity of the Epitaxially Grown Germanium Layer. Japanese Journal of Applied Physics, 7 (5) 468-475 doi:10.1143/jjap.7.468
Kitamura, Noboru, Kakehi, Masahiro, Wada, Takao (1977) Low Temperature Vapor Growth of Zinc Telluride. Japanese Journal of Applied Physics, 16 (9) 1541-1546 doi:10.1143/jjap.16.1541
Arizumi, Tetsuya, Nishinaga, Tatau, Kakehi, Masahiro, Shimokawa, Ryuichi (1968) The distribution of the imperfection centres in an epitaxially-grown germanium layer. Journal of Crystal Growth, 3. 226pp. doi:10.1016/0022-0248(68)90136-x
Sonomura, Hajimu, Miyauchi, Takeshi (1970) Injection Electroluminescence in Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1098-1102 doi:10.1143/jjap.9.1098
Arizumi, Tetsuya, Kobayashi, Nobuyuki (1970) The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Japanese Journal of Applied Physics, 9 (8) 1017 doi:10.1143/jjap.9.1017a
Hirose, Masataka, Altaf, Naseem, Arizumi, Tetsuya (1970) Contact Properties of Metal-Silicon Schottky Barriers. Japanese Journal of Applied Physics, 9 (3) 260-264 doi:10.1143/jjap.9.260
Adachi, Yoshio, Yoshida, Akira, Arizumi, Tetsuya (1970) Intervalley Transfer in Uniaxially Strainedn-Type Ge. Japanese Journal of Applied Physics, 9 (11) 1330-1333 doi:10.1143/jjap.9.1330
Mizutani, Teruyoshi, Ozawa, Osamu, Wada, Takao, Arizumi, Tetsuya (1970) ESR Centers in Silicon Monoxide. Japanese Journal of Applied Physics, 9 (5) 446-451 doi:10.1143/jjap.9.446
 
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