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Arizumi, Tetsuya, Kobayashi, Nobuyuki (1970) The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Japanese Journal of Applied Physics, 9 (8) 1017 doi:10.1143/jjap.9.1017a

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Reference TypeJournal (article/letter/editorial)
TitleThe Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method
JournalJapanese Journal of Applied Physics
AuthorsArizumi, TetsuyaAuthor
Kobayashi, NobuyukiAuthor
Year1970 (August)Volume9
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1017aSearch in ResearchGate
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Mindat Ref. ID14978069Long-form Identifiermindat:1:5:14978069:0
GUID0
Full ReferenceArizumi, Tetsuya, Kobayashi, Nobuyuki (1970) The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Japanese Journal of Applied Physics, 9 (8) 1017 doi:10.1143/jjap.9.1017a
Plain TextArizumi, Tetsuya, Kobayashi, Nobuyuki (1970) The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Japanese Journal of Applied Physics, 9 (8) 1017 doi:10.1143/jjap.9.1017a
In(1970, August) Japanese Journal of Applied Physics Vol. 9 (8) Japan Society of Applied Physics

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Arizumi, Tetsuya, Kobayashi, Nobuyuki (1969) The Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Japanese Journal of Applied Physics, 8 (9) 1091-1097 doi:10.1143/jjap.8.1091
Kobayashi, Nobuyuki, Arizumi, Tetsuya (1970) The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski Method. Japanese Journal of Applied Physics, 9 (4) 361-367 doi:10.1143/jjap.9.361
Kobayashi, Nobuyuki, Arizumi, Tetsuya (1970) The Numerical Analyses of the Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Part II. Effects of the Crucible Rotation. Japanese Journal of Applied Physics, 9 (10) 1255-1259 doi:10.1143/jjap.9.1255
Arizumi, Tetsuya, Kobayashi, Nobuyuki (1972) Theoretical studies of the temperature distribution in a crystal being grown by the czochralski method. Journal of Crystal Growth, 13. 615-618 doi:10.1016/0022-0248(72)90529-5
Kakehi, Masahiro, Shimokawa, Ryuichi, Arizumi, Tetsuya (1970) Epitaxial Vapor Growth of Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1039-1044 doi:10.1143/jjap.9.1039
Hirose, Masataka, Altaf, Naseem, Arizumi, Tetsuya (1970) Contact Properties of Metal-Silicon Schottky Barriers. Japanese Journal of Applied Physics, 9 (3) 260-264 doi:10.1143/jjap.9.260
Adachi, Yoshio, Yoshida, Akira, Arizumi, Tetsuya (1970) Intervalley Transfer in Uniaxially Strainedn-Type Ge. Japanese Journal of Applied Physics, 9 (11) 1330-1333 doi:10.1143/jjap.9.1330
Mizutani, Teruyoshi, Ozawa, Osamu, Wada, Takao, Arizumi, Tetsuya (1970) ESR Centers in Silicon Monoxide. Japanese Journal of Applied Physics, 9 (5) 446-451 doi:10.1143/jjap.9.446
Arizumi, Tetsuya, Nishinaga, Tatau, Kasuga, Masanobu, Ogawa, Hiroshi (1969) A New Method for the Epitaxial Growth of Silicon and Its Thermodynamical Analysis. Japanese Journal of Applied Physics, 8 (1) 32-40 doi:10.1143/jjap.8.32
Watanabe, Masahito, Kakimoto, Koichi, Eguchi, Minoru, Hibiya, Taketoshi (1997) Modification of Heat and Mass Transfers and Their Effect on the Crystal-Melt Interface Shape of Si Single Crystal during Czochralski Crystal Growth. Japanese Journal of Applied Physics, 36. 6181-6186 doi:10.1143/jjap.36.6181
Watanabe, Masahito, Eguchi, Minoru, Hibiya, Taketoshi (1999) Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method. Japanese Journal of Applied Physics, 38. doi:10.1143/jjap.38.l10
 
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