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Seki, Hisashi, Moriyama, Kooichi (1967) Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2System. Japanese Journal of Applied Physics, 6 (11) 1345-1346 doi:10.1143/jjap.6.1345

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Reference TypeJournal (article/letter/editorial)
TitleVapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2System
JournalJapanese Journal of Applied Physics
AuthorsSeki, HisashiAuthor
Moriyama, KooichiAuthor
Year1967 (November)Volume6
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.1345Search in ResearchGate
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Mindat Ref. ID14976742Long-form Identifiermindat:1:5:14976742:4
GUID0
Full ReferenceSeki, Hisashi, Moriyama, Kooichi (1967) Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2System. Japanese Journal of Applied Physics, 6 (11) 1345-1346 doi:10.1143/jjap.6.1345
Plain TextSeki, Hisashi, Moriyama, Kooichi (1967) Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2System. Japanese Journal of Applied Physics, 6 (11) 1345-1346 doi:10.1143/jjap.6.1345
In(1967, November) Japanese Journal of Applied Physics Vol. 6 (11) Japan Society of Applied Physics

See Also

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Seki, Hisashi, Moriyama, Kooichi, Matumoto, Shyungo, Uramoto, Masayoshi (1967) Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2System. Japanese Journal of Applied Physics, 6 (6) 785-786 doi:10.1143/jjap.6.785
Seki, Hisashi, Moriyama, Kooichi, Asakawa, Izumi, Horie, Souji (1968) Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube. Japanese Journal of Applied Physics, 7 (11) 1324-1331 doi:10.1143/jjap.7.1324
Koukitu, Akinori, Hasegawa, Fumio, Seki, Hisashi (1988) Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl3and AsH3System. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1594
Seki, Hisashi, Araki, Hidemaro (1967) Vapor Transport Thermodynamics of GaP-Cl2-H2System in an Open Tube. Japanese Journal of Applied Physics, 6 (12) 1414-1418 doi:10.1143/jjap.6.1414
Koukitu, Akinori, Seki, Hisashi (1996) Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy. Japanese Journal of Applied Physics, 35. doi:10.1143/jjap.35.l1638
Oka, Yoshio, Shohno, Katsufusa (1968) Anomalous Etch Rate of Silicon Nitride Films Made from SiCl4-NH3-H2System. Japanese Journal of Applied Physics, 7 (4) 441-442 doi:10.1143/jjap.7.441
Ikeda, Hitoshi, Kamisawa, Masaru, Koukitu, Akinori, Seki, Hisashi (1990) Growth of GaAs by Cold-Wall Metalorganic-Chloride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 29. doi:10.1143/jjap.29.l2149
Seki, Hisashi, Minagawa, Shigekazu (1972) Equilibrium Computation for the Vapor Growth of InxGa1-xP Crystals. Japanese Journal of Applied Physics, 11 (6) 850-854 doi:10.1143/jjap.11.850
Matsumura, Hideki (1989) Low Temperature Deposition of Silicon Nitride by the Catalytic Chemical Vapor Deposition Method. Japanese Journal of Applied Physics, 28. 2157-2161 doi:10.1143/jjap.28.2157
Koukitu, Akinori, Seki, Hisashi (1977) Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System. Japanese Journal of Applied Physics, 16 (11) 1967-1971 doi:10.1143/jjap.16.1967
Koukitu, Akinori, Kouno, Satoshi, Takashima, Kouichirou, Seki, Hisashi (1984) Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method. Japanese Journal of Applied Physics, 23. 951-955 doi:10.1143/jjap.23.951
 
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