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Seki, Hisashi, Moriyama, Kooichi, Asakawa, Izumi, Horie, Souji (1968) Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube. Japanese Journal of Applied Physics, 7 (11) 1324-1331 doi:10.1143/jjap.7.1324

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Reference TypeJournal (article/letter/editorial)
TitleThermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube
JournalJapanese Journal of Applied Physics
AuthorsSeki, HisashiAuthor
Moriyama, KooichiAuthor
Asakawa, IzumiAuthor
Horie, SoujiAuthor
Year1968 (November)Volume7
Issue11
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.7.1324Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14977095Long-form Identifiermindat:1:5:14977095:0
GUID0
Full ReferenceSeki, Hisashi, Moriyama, Kooichi, Asakawa, Izumi, Horie, Souji (1968) Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube. Japanese Journal of Applied Physics, 7 (11) 1324-1331 doi:10.1143/jjap.7.1324
Plain TextSeki, Hisashi, Moriyama, Kooichi, Asakawa, Izumi, Horie, Souji (1968) Thermodynamic Study of the Transport and Epitaxial Growth of GaAs in an Open Tube. Japanese Journal of Applied Physics, 7 (11) 1324-1331 doi:10.1143/jjap.7.1324
In(1968, November) Japanese Journal of Applied Physics Vol. 7 (11) Japan Society of Applied Physics

See Also

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Seki, Hisashi, Moriyama, Kooichi, Matumoto, Shyungo, Uramoto, Masayoshi (1967) Thermodynamic Study of the Growth Rate of Epitaxial GaAs by GaAs/AsCl3/H2System. Japanese Journal of Applied Physics, 6 (6) 785-786 doi:10.1143/jjap.6.785
Seki, Hisashi, Kinoshita, Masayuki (1968) Epitaxial Growth of InP on GaAs in an Open Flow System. Japanese Journal of Applied Physics, 7 (9) 1142-1143 doi:10.1143/jjap.7.1142
Seki, Hisashi, Moriyama, Kooichi (1967) Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2System. Japanese Journal of Applied Physics, 6 (11) 1345-1346 doi:10.1143/jjap.6.1345
Seki, Hisashi, Araki, Hidemaro (1967) Vapor Transport Thermodynamics of GaP-Cl2-H2System in an Open Tube. Japanese Journal of Applied Physics, 6 (12) 1414-1418 doi:10.1143/jjap.6.1414
Koukitu, Akinori, Takahashi, Naoyuki, Seki, Hisashi (1997) Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides. Japanese Journal of Applied Physics, 36. doi:10.1143/jjap.36.l1136
Seki, Hisashi, Kookitu, Akinori, Ohta, Katuro, Fujimoto, Masatomo (1976) New Methods of Vapour Phase Epitaxial Growth of GaAs. Japanese Journal of Applied Physics, 15 (1) 11-17 doi:10.1143/jjap.15.11
Koukitu, Akinori, Seki, Hisashi (1977) Thermodynamic Analysis of the Vapour Growth of GaAs: The Inert Gas-Hydrogen Mixed Carrier System. Japanese Journal of Applied Physics, 16 (11) 1967-1971 doi:10.1143/jjap.16.1967
Kasuga, Masanobu, Ishihara, Shuji (1976) Epitaxial Growth of ZnO Films by Vapor Transport in an Open Tube System. Japanese Journal of Applied Physics, 15 (9) 1835-1836 doi:10.1143/jjap.15.1835
Seki, Hisashi, Araki, Hidemaro (1965) A Thermodynamical Study of the Growth Rate of Epitaxial Silicon from SiI4. Japanese Journal of Applied Physics, 4 (9) 645-651 doi:10.1143/jjap.4.645
Koukitu, Akinori, Kouno, Satoshi, Takashima, Kouichirou, Seki, Hisashi (1984) Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method. Japanese Journal of Applied Physics, 23. 951-955 doi:10.1143/jjap.23.951
Koukitu, Akinori, Hasegawa, Fumio, Seki, Hisashi (1988) Thermodynamic Analysis on Vapor Phase Epitaxy of GaAs by GaCl3and AsH3System. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l1594
 
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