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Sugiyama, Koichi (1967) Recombination and Trapping Processes at Deep Centers in N-Type GaAs. Japanese Journal of Applied Physics, 6 (5) 601-611 doi:10.1143/jjap.6.601

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Reference TypeJournal (article/letter/editorial)
TitleRecombination and Trapping Processes at Deep Centers in N-Type GaAs
JournalJapanese Journal of Applied Physics
AuthorsSugiyama, KoichiAuthor
Year1967 (May)Volume6
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.6.601Search in ResearchGate
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Mindat Ref. ID14976887Long-form Identifiermindat:1:5:14976887:2
GUID0
Full ReferenceSugiyama, Koichi (1967) Recombination and Trapping Processes at Deep Centers in N-Type GaAs. Japanese Journal of Applied Physics, 6 (5) 601-611 doi:10.1143/jjap.6.601
Plain TextSugiyama, Koichi (1967) Recombination and Trapping Processes at Deep Centers in N-Type GaAs. Japanese Journal of Applied Physics, 6 (5) 601-611 doi:10.1143/jjap.6.601
In(1967, May) Japanese Journal of Applied Physics Vol. 6 (5) Japan Society of Applied Physics

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Furukawa, Yoshitaka, Ishibashi, Yoshio (1967) Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes. Japanese Journal of Applied Physics, 6 (4) 503-508 doi:10.1143/jjap.6.503
Yamashita, Akiyasu (1967) Space-Charge Currents in n-Type GaAs. Japanese Journal of Applied Physics, 6 (1) 117 doi:10.1143/jjap.6.117
Tsubaki, Kotaro, Sugiyama, Koichi (1980) Heat Treatment of n-Type InP in Controlled Phosphorus Vapor. Japanese Journal of Applied Physics, 19 (6) 1185-1186 doi:10.1143/jjap.19.1185
Yamashita, Akiyasu (1967) High Field Effects above the Gunn Threshold in n-Type GaAs. Japanese Journal of Applied Physics, 6 (8) 1011 doi:10.1143/jjap.6.1011
Sekiguchi, Takashi, Sumino, Koji (1987) Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs. Japanese Journal of Applied Physics, 26. doi:10.1143/jjap.26.l179
Kawaharazuka, Atsushi, Shiraishi, Kenji, Horikoshi, Yoshiji (1998) Electric Field Induced Recombination Centers in GaAs. Japanese Journal of Applied Physics, 37. 1622-1625 doi:10.1143/jjap.37.1622
Endo, Tamio, Hirosaki, Yuushi, Uchida, Eiji, Miyake, Hideto, Sugiyama, Koichi (1989) Deep Levels in Electron-Irradiated GaP at 10 MeV. Japanese Journal of Applied Physics, 28. 1864-1870 doi:10.1143/jjap.28.1864
Taniguchi, Shizuo, Endo, Tamio, Sugiyama, Koichi (1986) Depth Distributions of ESR Centers Induced in Fused Quartz by Gas-Discharges. Japanese Journal of Applied Physics, 25. doi:10.1143/jjap.25.l722
Yamashita, Akiyasu, Nii, Riro (1966) Trapping of High Field Domain inn-Type GaAs. Japanese Journal of Applied Physics, 5 (4) 263-268 doi:10.1143/jjap.5.263
Ito, Hiroshi, Ishibashi, Tadao (1994) Surface Recombination Velocity in p-Type GaAs. Japanese Journal of Applied Physics, 33. 88-89 doi:10.1143/jjap.33.88
Tokumaru, Yozo, Kikuchi, Makoto (1967) Current Saturation and Oscillation in Photosensitive GaAs. Japanese Journal of Applied Physics, 6 (5) 654 doi:10.1143/jjap.6.654
 
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