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Bhattacharya, Tapan K. (1970) Photocurrent Oscillations in Oxygen-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 9 (10) 1268-1274 doi:10.1143/jjap.9.1268

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Reference TypeJournal (article/letter/editorial)
TitlePhotocurrent Oscillations in Oxygen-Doped Gallium Arsenide
JournalJapanese Journal of Applied Physics
AuthorsBhattacharya, Tapan K.Author
Year1970 (October)Volume9
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1268Search in ResearchGate
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Mindat Ref. ID14977802Long-form Identifiermindat:1:5:14977802:4
GUID0
Full ReferenceBhattacharya, Tapan K. (1970) Photocurrent Oscillations in Oxygen-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 9 (10) 1268-1274 doi:10.1143/jjap.9.1268
Plain TextBhattacharya, Tapan K. (1970) Photocurrent Oscillations in Oxygen-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 9 (10) 1268-1274 doi:10.1143/jjap.9.1268
In(1970, October) Japanese Journal of Applied Physics Vol. 9 (10) Japan Society of Applied Physics

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Tokumaru, Yozo (1970) Low-Frequency Photocurrent Oscillations and Trapping Levels in High-Resistivity GaAs Doped with Oxygen. Japanese Journal of Applied Physics, 9 (1) 95-100 doi:10.1143/jjap.9.95
Otsubo, Mutsuyuki, Miki, Hidejiro (1974) Chromium-Doped Semi-Insulating Gallium Arsenide Crystals Grown by Liquid Phase Epitaxy. Japanese Journal of Applied Physics, 13 (10) 1655-1656 doi:10.1143/jjap.13.1655
Aoki, Hiroyuki (1967) Electrical and X-Ray Investigation of Tin in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (10) 1248 doi:10.1143/jjap.6.1248
Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio (1973) Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 12 (1) 109-119 doi:10.1143/jjap.12.109
Furukawa, Yoshitaka (1967) Trap Levels in Gallium Arsenide. Japanese Journal of Applied Physics, 6 (6) 675-679 doi:10.1143/jjap.6.675
Saito, Yoshihiro, Nakajima, Shigeru (2003) Effect of Oxygen Plasma on Activation of Implanted Silicon in Gallium Arsenide (II) Japanese Journal of Applied Physics, 42. 5450-5454 doi:10.1143/jjap.42.5450
Ikoma, Hideaki, Toyama, Masaharu (1970) Effect of Heat Treatment on Gallium Arsenide Crystals III. Electrical Properties of Thermally Convertedp-Type Crystals. Japanese Journal of Applied Physics, 9 (4) 376-384 doi:10.1143/jjap.9.376
Nakano, Takao, Oku, Taiji (1967) Temperature Dependence of Recombination Lifetime in Gallium Arsenide Electroluminescent Diodes. Japanese Journal of Applied Physics, 6 (10) 1212-1221 doi:10.1143/jjap.6.1212
Sonomura, Hajimu, Miyauchi, Takeshi (1970) Injection Electroluminescence in Gallium Antimonide. Japanese Journal of Applied Physics, 9 (9) 1098-1102 doi:10.1143/jjap.9.1098
Seki, Yasukazu, Endo, Saburo, Irie, Taizo (1980) Low-Frequency Photocurrent Oscillations in CdIn2S4Single Crystals. Japanese Journal of Applied Physics, 19 (9) 1667-1674 doi:10.1143/jjap.19.1667
Ozeki, Masashi, Nakai, Kenya, Dazai, Kouichi, Ryuzan, Osamu (1974) Photoluminescence Study of Carbon Doped Gallium Arsenide. Japanese Journal of Applied Physics, 13 (7) 1121-1126 doi:10.1143/jjap.13.1121
 
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