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Nishino, Taneo, Hamakawa, Yoshihiro (1970) Electrical and Optical Properties of Si-SnO2Heterojunctions. Japanese Journal of Applied Physics, 9 (9) 1085-1090 doi:10.1143/jjap.9.1085

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Reference TypeJournal (article/letter/editorial)
TitleElectrical and Optical Properties of Si-SnO2Heterojunctions
JournalJapanese Journal of Applied Physics
AuthorsNishino, TaneoAuthor
Hamakawa, YoshihiroAuthor
Year1970 (September)Volume9
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.9.1085Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14978099Long-form Identifiermindat:1:5:14978099:7
GUID0
Full ReferenceNishino, Taneo, Hamakawa, Yoshihiro (1970) Electrical and Optical Properties of Si-SnO2Heterojunctions. Japanese Journal of Applied Physics, 9 (9) 1085-1090 doi:10.1143/jjap.9.1085
Plain TextNishino, Taneo, Hamakawa, Yoshihiro (1970) Electrical and Optical Properties of Si-SnO2Heterojunctions. Japanese Journal of Applied Physics, 9 (9) 1085-1090 doi:10.1143/jjap.9.1085
In(1970, September) Japanese Journal of Applied Physics Vol. 9 (9) Japan Society of Applied Physics

See Also

These are possibly similar items as determined by title/reference text matching only.

Nishino, Taneo, Hamakawa, Yoshihiro (1977) Preparation and Properties of InS Single Crystals. Japanese Journal of Applied Physics, 16 (8) 1291-1300 doi:10.1143/jjap.16.1291
Nakayama, Hiroshi, Katsura, Johji, Nishino, Taneo, Hamakawa, Yoshihiro (1980) Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l547
Yasutake, Kiyoshi, Umeno, Masataka, Kawabe, Hideaki, Nakayama, Hiroshi, Nishino, Taneo, Hamakawa, Yoshihiro (1980) Oxygen-Related Donors Generated at 800°C in CZ-Si. Japanese Journal of Applied Physics, 19 (9) doi:10.1143/jjap.19.l544
Nishino, Taneo, Yanagida, Toshio, Hamakawa, Yoshihiro (1972) Impurity Electroabsorption of GaAs. Japanese Journal of Applied Physics, 11 (8) 1221 doi:10.1143/jjap.11.1221
Okuyama, Masanori, Nishino, Taneo, Hamakawa, Yoshihiro (1972) Thermal and Electric Field Broadening in Electro-Optical Effect. Japanese Journal of Applied Physics, 11 (7) 1002-1008 doi:10.1143/jjap.11.1002
Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro (1982) Cr-Related Intracenter Luminescence in GaAs: Cr. Japanese Journal of Applied Physics, 21. doi:10.1143/jjap.21.l727
Nishino, Taneo, Takakura, Hideyuki, Hamakawa, Yoshihiro (1974) Optical Absorption Edge of Layer Compound InS Grown from In Melt. Japanese Journal of Applied Physics, 13 (11) 1921-1922 doi:10.1143/jjap.13.1921
Ohtsuka, Ken-ichi, Nishino, Taneo, Hamakawa, Yoshihiro (1982) Diffusion Profiles of Cd in InP. Japanese Journal of Applied Physics, 21. 1170-1173 doi:10.1143/jjap.21.1170
Yagi, Tetsuya, Fujiwara, Yasufumi, Nishino, Taneo, Hamakawa, Yoshihiro (1983) Photoluminescence and Lattice Mismatch in InGaAs/InP. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l467
Fujisawa, Akira, Nishino, Taneo, Hamakawa, Yoshihiro (1988) Hall-Effect Measurement on Polycrystalline SnO2Thin Films. Japanese Journal of Applied Physics, 27. 552-555 doi:10.1143/jjap.27.552
Katsura, Johji, Nakayama, Hiroshi, Nishino, Taneo, Hamakawa, Yoshihiro (1982) Characterization of Thermally-Induced Defects in CZ–Si by Room-Temperature Photoluminescence. Japanese Journal of Applied Physics, 21. 712-715 doi:10.1143/jjap.21.712
 
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