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Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1973) Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride. Japanese Journal of Applied Physics, 12 (10) 1558-1566 doi:10.1143/jjap.12.1558

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Reference TypeJournal (article/letter/editorial)
TitleEdge and Donor-Acceptor Pair Emissions in Cadmium Telluride
JournalJapanese Journal of Applied Physics
AuthorsTaguchi, TsunemasaAuthor
Shirafuji, JunjiAuthor
Inuishi, YoshioAuthor
Year1973 (October)Volume12
Issue10
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.12.1558Search in ResearchGate
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Mindat Ref. ID14979040Long-form Identifiermindat:1:5:14979040:8
GUID0
Full ReferenceTaguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1973) Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride. Japanese Journal of Applied Physics, 12 (10) 1558-1566 doi:10.1143/jjap.12.1558
Plain TextTaguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1973) Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride. Japanese Journal of Applied Physics, 12 (10) 1558-1566 doi:10.1143/jjap.12.1558
In(1973, October) Japanese Journal of Applied Physics Vol. 12 (10) Japan Society of Applied Physics

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Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1972) Effect of Electron Irradiation on Edge Emission Spectra in CdTe. Japanese Journal of Applied Physics, 11 (11) 1747 doi:10.1143/jjap.11.1747
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) Annealing Behavior of Defects in Electron-Irradiatedp-Type CdTe. Japanese Journal of Applied Physics, 13 (6) 1003-1004 doi:10.1143/jjap.13.1003
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) High-Purity CdTe Single Crystals Grown from Solutions. Japanese Journal of Applied Physics, 13 (7) 1169-1170 doi:10.1143/jjap.13.1169
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1978) Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe. Japanese Journal of Applied Physics, 17 (8) 1331-1342 doi:10.1143/jjap.17.1331
Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio (1973) Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 12 (1) 109-119 doi:10.1143/jjap.12.109
Shirafuji, Junji, Nakanishi, Koichiro, Inuishi, Yoshio (1973) Amplification of Rayleigh Wave in GaAs with Monolithic Structure. Japanese Journal of Applied Physics, 12 (11) 1812-1813 doi:10.1143/jjap.12.1812
Taguchi, Tsunemasa, Shirafuji, Junji, Kobayasmt, Tetsuji, Inuishi, Yoshio (1976) High Purity CdTe and Its Application to Radiation Detectors. Japanese Journal of Applied Physics, 15. 267 doi:10.7567/jjaps.15s1.267
Hongo, Shozo, Panyakeow, Somsak, Shirafuji, Junji, Inuishi, Yoshio (1971) InSb Carrier Lifetime in High Electric Field. Japanese Journal of Applied Physics, 10 (6) 717-721 doi:10.1143/jjap.10.717
Taguchi, Tsunemasa, Inuishi, Yoshio (1980) Radiationā€induced defects and their annealing behavior in cadmium telluride. Journal of Applied Physics, 51 (9). 4757-4769 doi:10.1063/1.328307
Inoue, Masataka, Ashida, Kazumi, Sugino, Takashi, Shirafuji, Junji, Inuishi, Yoshio (1973) Velocity-Field Characteristics in III-V Mixed Crystals, GaSbxAs1-xand InxGa1-xAs. Japanese Journal of Applied Physics, 12 (6) 932-933 doi:10.1143/jjap.12.932
Inoue, Masataka, Shirafuji, Junji, Inuishi, Yoshio (1971) Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide. Japanese Journal of Applied Physics, 10 (10) 1378-1387 doi:10.1143/jjap.10.1378
 
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