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Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) Annealing Behavior of Defects in Electron-Irradiatedp-Type CdTe. Japanese Journal of Applied Physics, 13 (6) 1003-1004 doi:10.1143/jjap.13.1003

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Reference TypeJournal (article/letter/editorial)
TitleAnnealing Behavior of Defects in Electron-Irradiatedp-Type CdTe
JournalJapanese Journal of Applied Physics
AuthorsTaguchi, TsunemasaAuthor
Shirafuji, JunjiAuthor
Inuishi, YoshioAuthor
Year1974 (June)Volume13
Issue6
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.13.1003Search in ResearchGate
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Mindat Ref. ID14980212Long-form Identifiermindat:1:5:14980212:5
GUID0
Full ReferenceTaguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) Annealing Behavior of Defects in Electron-Irradiatedp-Type CdTe. Japanese Journal of Applied Physics, 13 (6) 1003-1004 doi:10.1143/jjap.13.1003
Plain TextTaguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) Annealing Behavior of Defects in Electron-Irradiatedp-Type CdTe. Japanese Journal of Applied Physics, 13 (6) 1003-1004 doi:10.1143/jjap.13.1003
In(1974, June) Japanese Journal of Applied Physics Vol. 13 (6) Japan Society of Applied Physics

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Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) High-Purity CdTe Single Crystals Grown from Solutions. Japanese Journal of Applied Physics, 13 (7) 1169-1170 doi:10.1143/jjap.13.1169
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1972) Effect of Electron Irradiation on Edge Emission Spectra in CdTe. Japanese Journal of Applied Physics, 11 (11) 1747 doi:10.1143/jjap.11.1747
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1978) Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTe. Japanese Journal of Applied Physics, 17 (8) 1331-1342 doi:10.1143/jjap.17.1331
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1973) Edge and Donor-Acceptor Pair Emissions in Cadmium Telluride. Japanese Journal of Applied Physics, 12 (10) 1558-1566 doi:10.1143/jjap.12.1558
Taguchi, Tsunemasa, Shirafuji, Junji, Kobayasmt, Tetsuji, Inuishi, Yoshio (1976) High Purity CdTe and Its Application to Radiation Detectors. Japanese Journal of Applied Physics, 15. 267 doi:10.7567/jjaps.15s1.267
Shirafuji, Junji, Kakiuchi, Takao, Oka, Koji, Inuishi, Yoshio (1983) Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs1-xPx. Japanese Journal of Applied Physics, 22. 1368-1373 doi:10.1143/jjap.22.1368
Kumagai, Naoki, Shirafuji, Junji, Inuishi, Yoshio (1984) Photo-Induced ESR and Its Annealing Behavior in Melt-Quenched Geā€“S Glasses. Japanese Journal of Applied Physics, 23. 1287-1293 doi:10.1143/jjap.23.1287
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1978) Gamma and electron radiation effects in CdTe. Nuclear Instruments and Methods, 150 (1). 43-48 doi:10.1016/0029-554x(78)90455-x
Taguchi, Tsunemasa, Inuishi, Yoshio (1980) Radiationā€induced defects and their annealing behavior in cadmium telluride. Journal of Applied Physics, 51 (9). 4757-4769 doi:10.1063/1.328307
Shirafuji, Junji, Kuwagaki, Mamoru, Inuishi, Yoshio (1984) Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l184
Hongo, Shozo, Panyakeow, Somsak, Shirafuji, Junji, Inuishi, Yoshio (1971) InSb Carrier Lifetime in High Electric Field. Japanese Journal of Applied Physics, 10 (6) 717-721 doi:10.1143/jjap.10.717
 
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