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Aoki, Kazunori, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1976) Photoluminescence Study of Cd-Ion Implantedn-GaAs. Japanese Journal of Applied Physics, 15 (1) 145-149 doi:10.1143/jjap.15.145

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence Study of Cd-Ion Implantedn-GaAs
JournalJapanese Journal of Applied Physics
AuthorsAoki, KazunoriAuthor
Gamo, KenjiAuthor
Masuda, KohzohAuthor
Namba, SusumuAuthor
Year1976 (January)Volume15
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.15.145Search in ResearchGate
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Mindat Ref. ID14981000Long-form Identifiermindat:1:5:14981000:7
GUID0
Full ReferenceAoki, Kazunori, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1976) Photoluminescence Study of Cd-Ion Implantedn-GaAs. Japanese Journal of Applied Physics, 15 (1) 145-149 doi:10.1143/jjap.15.145
Plain TextAoki, Kazunori, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1976) Photoluminescence Study of Cd-Ion Implantedn-GaAs. Japanese Journal of Applied Physics, 15 (1) 145-149 doi:10.1143/jjap.15.145
In(1976, January) Japanese Journal of Applied Physics Vol. 15 (1) Japan Society of Applied Physics

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Aoki, Kazunori, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1976) Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs. Japanese Journal of Applied Physics, 15 (2) 405-406 doi:10.1143/jjap.15.405
Gamo, Kenji, Aoki, Kazunori, Masuda, Kohzoh, Namba, Susumu (1971) Diffusion of Defects in Low Temperature Ion Implanted GaAs. Japanese Journal of Applied Physics, 10 (8) 1118-1119 doi:10.1143/jjap.10.1118
Lin, Miin-Shyong, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1976) Photoluminescence and Electrical Measurements on Manganese Ion-Implanted GaAs. Japanese Journal of Applied Physics, 15 (1) 53-56 doi:10.1143/jjap.15.53
Lin, Miin-Shyong, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1973) Dose Dependence of Photoluminescence Degradation in Te Ion-Implanted GaAs. Japanese Journal of Applied Physics, 12 (7) 1092-1093 doi:10.1143/jjap.12.1092
Yuba, Yoshihiko, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1974) Hall Effect Measurements of Zn Implanted GaAs. Japanese Journal of Applied Physics, 13 (4) 641-644 doi:10.1143/jjap.13.641
Lin, Miin-Shyong, Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu (1975) Activation Energies of Formation and Diffusion of As Vacancy in GaAs Measured by Photoluminescence. Japanese Journal of Applied Physics, 14 (11) 1839-1840 doi:10.1143/jjap.14.1839
Gamo, Kenji, Masuda, Kohzoh, Namba, Susumu, Ilic, Gradimir (1972) Lattice Location of Sb Implanted in GaAs Single Crystals. Japanese Journal of Applied Physics, 11 (10) 1577-1578 doi:10.1143/jjap.11.1577
Yokota, Katsuhiro, Tamura, Susumu, Gamo, Kenji, Namba, Susumu, Masuda, Kohzoh, Ishihara, Shinji, Kimura, Itsuro (1978) Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2and Si3N4. Japanese Journal of Applied Physics, 17 (10) 1881-1882 doi:10.1143/jjap.17.1881
Kawabe, Mitsuo, Masuyama, Akio, Aoki, Kazunori, Masuda, Kohzoh, Namba, Susumu (1970) Abnormal Laser Emission from Electron Beam Excited GaAs. Japanese Journal of Applied Physics, 9 (7) 850-851 doi:10.1143/jjap.9.850
Gamo, Kenji, Goshi, Hiroo, Takai, Mikio, Iwaki, Masaya, Masuda, Kohzoh, Namba, Susumu (1977) Control ofTcfor Niobium by N Ion Implantation. Japanese Journal of Applied Physics, 16 (10) 1853-1857 doi:10.1143/jjap.16.1853
Gamo, Kenji, Doi, Atsutoshi, Masuda, Kohzoh, Namba, Susumu, Ishihara, Shinji, Kimura, Itsuro (1970) Enhanced Diffusion of Ion Implanted Sb in Silicon. Japanese Journal of Applied Physics, 9 (3) 333-334 doi:10.1143/jjap.9.333
 
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