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Hagiwara, T., Takeda, E., Horiuchi, M., Kondo, R., Itoh, Y. (1977) Analysis and Experimentation on FIMOS (n-channel FAMOS) Devices. Japanese Journal of Applied Physics, 16. 211 doi:10.7567/jjaps.16s1.211

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Reference TypeJournal (article/letter/editorial)
TitleAnalysis and Experimentation on FIMOS (n-channel FAMOS) Devices
JournalJapanese Journal of Applied Physics
AuthorsHagiwara, T.Author
Takeda, E.Author
Horiuchi, M.Author
Kondo, R.Author
Itoh, Y.Author
Year1977 (January 1)Volume16
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.16s1.211Search in ResearchGate
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Mindat Ref. ID14981570Long-form Identifiermindat:1:5:14981570:5
GUID0
Full ReferenceHagiwara, T., Takeda, E., Horiuchi, M., Kondo, R., Itoh, Y. (1977) Analysis and Experimentation on FIMOS (n-channel FAMOS) Devices. Japanese Journal of Applied Physics, 16. 211 doi:10.7567/jjaps.16s1.211
Plain TextHagiwara, T., Takeda, E., Horiuchi, M., Kondo, R., Itoh, Y. (1977) Analysis and Experimentation on FIMOS (n-channel FAMOS) Devices. Japanese Journal of Applied Physics, 16. 211 doi:10.7567/jjaps.16s1.211
In(1977) Japanese Journal of Applied Physics Vol. 16. Japan Society of Applied Physics

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Yatsuda, Yuji, Minami, Shin-ichi, Kondo, Ryuji, Hagiwara, Takaaki, Itoh, Yokichi (1980) Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices. Japanese Journal of Applied Physics, 19. 219 doi:10.7567/jjaps.19s1.219
Yatsuda, Yuji, Hagiwara, Takaaki, Kondo, Ryuji, Minami, Shinichi, Itoh, Yokichi (1979) n-channel Si-gate MNOS Device for High Speed EAROM. Japanese Journal of Applied Physics, 18. 21 doi:10.7567/jjaps.18s1.21
Furuoya, T. (1977) Invited: Magnetic Bubble Devices. Japanese Journal of Applied Physics, 16. 341 doi:10.7567/jjaps.16s1.341
Kondo, Ryuji, Yatsuda, Yuji, Koyanagi, Mitsumasa, Itoh, Yokichi (1980) Dynamic Injection MNOS Memory Devices. Japanese Journal of Applied Physics, 19. 231 doi:10.7567/jjaps.19s1.231
Ohara, Seiji (1977) Invited: Research on Optical Communication Devices in Japan. Japanese Journal of Applied Physics, 16. 305 doi:10.7567/jjaps.16s1.305
Nannichi, Yasuo (1977) Invited: Degradation in Optoelectronic Devices. Japanese Journal of Applied Physics, 16. 361 doi:10.7567/jjaps.16s1.361
Cho, A. Y. (1977) Invited: Preparation and Properties of GaAs Devices by Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 16. 435 doi:10.7567/jjaps.16s1.435
Yatsuda, Yuji, Hagiwara, Takaaki, Minami, Shin-ichi, Kondo, Ryuji, Uchida, Ken, Uchiumi, Kyotake (1982) Scaling Down MNOS Nonvolatile Memory Devices. Japanese Journal of Applied Physics, 21. 85 doi:10.7567/jjaps.21s1.85
Hesse, J. (1977) Invited: IV-VI Narrow Gap Semiconductors and Devices. Japanese Journal of Applied Physics, 16. 297 doi:10.7567/jjaps.16s1.297
Pankove, J. I. (1977) Invited: New Materials for Electroluminescent Devices. Japanese Journal of Applied Physics, 16. 359 doi:10.7567/jjaps.16s1.359
Gray, K. W. (1977) Invited: Recent Advances in Microwave Devices. Japanese Journal of Applied Physics, 16. 81 doi:10.7567/jjaps.16s1.81
 
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