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Yatsuda, Yuji, Minami, Shin-ichi, Kondo, Ryuji, Hagiwara, Takaaki, Itoh, Yokichi (1980) Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices. Japanese Journal of Applied Physics, 19. 219 doi:10.7567/jjaps.19s1.219

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Reference TypeJournal (article/letter/editorial)
TitleEffects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices
JournalJapanese Journal of Applied Physics
AuthorsYatsuda, YujiAuthor
Minami, Shin-ichiAuthor
Kondo, RyujiAuthor
Hagiwara, TakaakiAuthor
Itoh, YokichiAuthor
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.219Search in ResearchGate
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Mindat Ref. ID14983431Long-form Identifiermindat:1:5:14983431:7
GUID0
Full ReferenceYatsuda, Yuji, Minami, Shin-ichi, Kondo, Ryuji, Hagiwara, Takaaki, Itoh, Yokichi (1980) Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices. Japanese Journal of Applied Physics, 19. 219 doi:10.7567/jjaps.19s1.219
Plain TextYatsuda, Yuji, Minami, Shin-ichi, Kondo, Ryuji, Hagiwara, Takaaki, Itoh, Yokichi (1980) Effects of High Temperature Hydrogen Annealing on n-Channel Si-Gate MNOS Devices. Japanese Journal of Applied Physics, 19. 219 doi:10.7567/jjaps.19s1.219
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Yatsuda, Yuji, Hagiwara, Takaaki, Kondo, Ryuji, Minami, Shinichi, Itoh, Yokichi (1979) n-channel Si-gate MNOS Device for High Speed EAROM. Japanese Journal of Applied Physics, 18. 21 doi:10.7567/jjaps.18s1.21
Kondo, Ryuji, Yatsuda, Yuji, Koyanagi, Mitsumasa, Itoh, Yokichi (1980) Dynamic Injection MNOS Memory Devices. Japanese Journal of Applied Physics, 19. 231 doi:10.7567/jjaps.19s1.231
Yatsuda, Yuji, Hagiwara, Takaaki, Minami, Shin-ichi, Kondo, Ryuji, Uchida, Ken, Uchiumi, Kyotake (1982) Scaling Down MNOS Nonvolatile Memory Devices. Japanese Journal of Applied Physics, 21. 85 doi:10.7567/jjaps.21s1.85
Hagiwara, T., Takeda, E., Horiuchi, M., Kondo, R., Itoh, Y. (1977) Analysis and Experimentation on FIMOS (n-channel FAMOS) Devices. Japanese Journal of Applied Physics, 16. 211 doi:10.7567/jjaps.16s1.211
Minami, Shin-ichi, Kamigaki, Yoshiaki, Uchida, Ken, Furusawa, Kazunori, Hagiwara, Takaaki (1988) Improvement of Written-State Retentivity by Scaling Down MNOS Memory Devices. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2168
Hsia, Yukun, Ngai, K. L. (1980) MNOS Traps and Tailored Trap Distribution Gate Dielectric MNOS. Japanese Journal of Applied Physics, 19. 245 doi:10.7567/jjaps.19s1.245
Saito, Shozo, Uchida, Yukimasa, Endo, Norio (1980) N-Channel High Speed Nonvolatile Static RAM Utilizing MNOS Capasitors. Japanese Journal of Applied Physics, 19. 225 doi:10.7567/jjaps.19s1.225
Derbenwick, Gary, Dodson, William, Sokel, Ralph (1980) High-Speed Nonvolatile MNOS/CMOS RAM. Japanese Journal of Applied Physics, 19. 239 doi:10.7567/jjaps.19s1.239
Hagiwara, Takaaki, Tanaka, Shoji (1974) Electron Tunneling Effects of HgTe. Japanese Journal of Applied Physics, 13. 433 doi:10.7567/jjaps.2s2.433
Yamazaki, Shin-ichi, Hayasaka, Toa (1980) (Invited) X-Ray Lithography. Japanese Journal of Applied Physics, 19. 35 doi:10.7567/jjaps.19s1.35
Hashimoto, Norikazu, Yatsuda, Yuji, Mutoh, Shimpei (1977) Glass Flow Mechanism of Phosphosilicate Glass and Its Application in MOS Devices. Japanese Journal of Applied Physics, 16. 73 doi:10.7567/jjaps.16s1.73
 
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