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Ueda, Zen'ichi, Shirafuji, Junji, Inuishi, Yoshio (1977) Effect of Illumination on CdS–LiNbO3Separated Medium Convolver. Japanese Journal of Applied Physics, 16 (7) 1143-1152 doi:10.1143/jjap.16.1143

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Reference TypeJournal (article/letter/editorial)
TitleEffect of Illumination on CdS–LiNbO3Separated Medium Convolver
JournalJapanese Journal of Applied Physics
AuthorsUeda, Zen'ichiAuthor
Shirafuji, JunjiAuthor
Inuishi, YoshioAuthor
Year1977 (July)Volume16
Issue7
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.16.1143Search in ResearchGate
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Mindat Ref. ID14982034Long-form Identifiermindat:1:5:14982034:1
GUID0
Full ReferenceUeda, Zen'ichi, Shirafuji, Junji, Inuishi, Yoshio (1977) Effect of Illumination on CdS–LiNbO3Separated Medium Convolver. Japanese Journal of Applied Physics, 16 (7) 1143-1152 doi:10.1143/jjap.16.1143
Plain TextUeda, Zen'ichi, Shirafuji, Junji, Inuishi, Yoshio (1977) Effect of Illumination on CdS–LiNbO3Separated Medium Convolver. Japanese Journal of Applied Physics, 16 (7) 1143-1152 doi:10.1143/jjap.16.1143
In(1977, July) Japanese Journal of Applied Physics Vol. 16 (7) Japan Society of Applied Physics

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Ueda, Zen'ichi, Shirafuji, Junji (1979) Effect of Illumination and Bias Field on Semiconductive CdS Monolithic Convolver with High-Resistivity Surface Layer. Japanese Journal of Applied Physics, 18 (8) 1517-1524 doi:10.1143/jjap.18.1517
Shirafuji, Junji, Kim, Gi Il, Inuishi, Yoshio (1977) Photoluminescence and Optical Properties of Ge1-xSexGlasses. Japanese Journal of Applied Physics, 16 (5) 881 doi:10.1143/jjap.16.881b
Shirafuji, Junji, Kim, Gi Il, Inuishi, Yoshio (1977) Photoluminescence and Optical Properties of Ge1-xSexGlasses. Japanese Journal of Applied Physics, 16 (1) 67-76 doi:10.1143/jjap.16.67
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1972) Effect of Electron Irradiation on Edge Emission Spectra in CdTe. Japanese Journal of Applied Physics, 11 (11) 1747 doi:10.1143/jjap.11.1747
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) High-Purity CdTe Single Crystals Grown from Solutions. Japanese Journal of Applied Physics, 13 (7) 1169-1170 doi:10.1143/jjap.13.1169
Shirafuji, Junji, Kuwagaki, Mamoru, Sato, Taka'aki, Inuishi, Yoshio (1984) Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous Silicon. Japanese Journal of Applied Physics, 23. 1278-1286 doi:10.1143/jjap.23.1278
Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio (1981) Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAs. Japanese Journal of Applied Physics, 20 (4) 795-796 doi:10.1143/jjap.20.795
Jeong, Manu, Shirafuji, Junji, Inuishi, Yoshio (1973) Photoluminescence Studies in Irradiated Si-Doped Gallium Arsenide. Japanese Journal of Applied Physics, 12 (1) 109-119 doi:10.1143/jjap.12.109
Miyanishi, Atsushi, Nakata, Jun-ichi, Imao, Shozo, Shirafuji, Junji, Kubo, Uichi, Inuishi, Yoshio (1989) Negative Staebler-Wronski Effect in Undoped a-Si:H. Japanese Journal of Applied Physics, 28. doi:10.1143/jjap.28.l2125
Shirafuji, Junji, Nakanishi, Koichiro, Inuishi, Yoshio (1973) Amplification of Rayleigh Wave in GaAs with Monolithic Structure. Japanese Journal of Applied Physics, 12 (11) 1812-1813 doi:10.1143/jjap.12.1812
Taguchi, Tsunemasa, Shirafuji, Junji, Inuishi, Yoshio (1974) Annealing Behavior of Defects in Electron-Irradiatedp-Type CdTe. Japanese Journal of Applied Physics, 13 (6) 1003-1004 doi:10.1143/jjap.13.1003
 
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