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Yoshihara, Hideo, Mori, Hidefumi, Kiuchi, Mikiho, Kadota, Toshiki (1978) Preparation of Si–C Films by Plasma Deposition Process with Neutralization. Japanese Journal of Applied Physics, 17 (9) 1693-1694 doi:10.1143/jjap.17.1693

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of Si–C Films by Plasma Deposition Process with Neutralization
JournalJapanese Journal of Applied Physics
AuthorsYoshihara, HideoAuthor
Mori, HidefumiAuthor
Kiuchi, MikihoAuthor
Kadota, ToshikiAuthor
Year1978 (September)Volume17
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.17.1693Search in ResearchGate
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Mindat Ref. ID14982842Long-form Identifiermindat:1:5:14982842:2
GUID0
Full ReferenceYoshihara, Hideo, Mori, Hidefumi, Kiuchi, Mikiho, Kadota, Toshiki (1978) Preparation of Si–C Films by Plasma Deposition Process with Neutralization. Japanese Journal of Applied Physics, 17 (9) 1693-1694 doi:10.1143/jjap.17.1693
Plain TextYoshihara, Hideo, Mori, Hidefumi, Kiuchi, Mikiho, Kadota, Toshiki (1978) Preparation of Si–C Films by Plasma Deposition Process with Neutralization. Japanese Journal of Applied Physics, 17 (9) 1693-1694 doi:10.1143/jjap.17.1693
In(1978, September) Japanese Journal of Applied Physics Vol. 17 (9) Japan Society of Applied Physics

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Yoshihara, Hideo, Mori, Hidefumi, Kikuchi, Mikiho (1977) Synthesis of SiC Films by Plasma Deposition Process. Japanese Journal of Applied Physics, 16 (11) 2047-2048 doi:10.1143/jjap.16.2047
Mori, Hidefumi, Yoshihara, Hideo (1978) Synthesis of Titanium Nitride by Enhanced ARE Process. Japanese Journal of Applied Physics, 17 (4) 757 doi:10.1143/jjap.17.757a
Mori, Hidefumi, Yoshihara, Hideo (1978) Synthesis of Titanium Nitride by Enhanced ARE Process. Japanese Journal of Applied Physics, 17 (3) 575-576 doi:10.1143/jjap.17.575
Yoshihara, Hideo, Kiuchi, Mikiho, Saito, Yasunao, Nakayama, Satoshi (1979) X-Ray Silicon Target Preparation for X-Ray Lithographic System. Japanese Journal of Applied Physics, 18 (10) 2021-2022 doi:10.1143/jjap.18.2021
Mori, Hidefumi, Yoshihara, Hideo (1979) Ion Effect on γ-Al2O3Films by Enhanced ARE Process. Japanese Journal of Applied Physics, 18 (4) 837-838 doi:10.1143/jjap.18.837
Matsuo, Seitaro, Kiuchi, Mikiho (1983) Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l210
Suzuki, Katsumi, Matsui, Junji, Kadota, Toshiki, Ono, Toshiro (1978) Preparation of X-Ray Lithography Masks with Large Area Sandwich Structure Membrane. Japanese Journal of Applied Physics, 17 (8) 1447-1448 doi:10.1143/jjap.17.1447
Tachikawa, Masami, Yamada, Takeshi, Sasaki, Tohru, Mori, Hidefumi, Kadota, Yoshiaki (1995) Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l657
Mimura, Yoshiaki, Kiuchi, Mikiho, Anzai, Kazunori, Machida, Katsuyuki (1996) A Silicon Oxide Antireflective Layer For Optical Lithography Using Electron Cyclotron Resonance Plasma Deposition. Japanese Journal of Applied Physics, 35. 2863-2869 doi:10.1143/jjap.35.2863
Okada, Ikuo, Yoshihara, Hideo (1981) Preparation of MnBi by Enhanced Activated Reactive Evaporation Process. Japanese Journal of Applied Physics, 20 (4) 775-776 doi:10.1143/jjap.20.775
Mohri, Mikio, Kakinuma, Hiroaki, Sakamoto, Masaaki, Sawai, Hideo (1991) Very-Low-Temperature Preparation of Poly-Si Films by Plasma Chemical Vapor Deposition Using SiF4/SiH4/H2Gases. Japanese Journal of Applied Physics, 30. doi:10.1143/jjap.30.l779
 
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