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Okada, Ikuo, Yoshihara, Hideo (1981) Preparation of MnBi by Enhanced Activated Reactive Evaporation Process. Japanese Journal of Applied Physics, 20 (4) 775-776 doi:10.1143/jjap.20.775

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of MnBi by Enhanced Activated Reactive Evaporation Process
JournalJapanese Journal of Applied Physics
AuthorsOkada, IkuoAuthor
Yoshihara, HideoAuthor
Year1981 (April)Volume20
Issue4
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.775Search in ResearchGate
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Mindat Ref. ID14984929Long-form Identifiermindat:1:5:14984929:8
GUID0
Full ReferenceOkada, Ikuo, Yoshihara, Hideo (1981) Preparation of MnBi by Enhanced Activated Reactive Evaporation Process. Japanese Journal of Applied Physics, 20 (4) 775-776 doi:10.1143/jjap.20.775
Plain TextOkada, Ikuo, Yoshihara, Hideo (1981) Preparation of MnBi by Enhanced Activated Reactive Evaporation Process. Japanese Journal of Applied Physics, 20 (4) 775-776 doi:10.1143/jjap.20.775
In(1981, April) Japanese Journal of Applied Physics Vol. 20 (4) Japan Society of Applied Physics

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Watanabe, Iwao, Yoshihara, Hideo, Saitoh, Yasunao, Matsuo, Seitaro (1981) Very Steep Profile Resist Pattern Preparation by Reactive Ion Etching with Ar+CH4Gas Mixture. Japanese Journal of Applied Physics, 20 (11) doi:10.1143/jjap.20.l804
Mori, Hidefumi, Yoshihara, Hideo (1978) Synthesis of Titanium Nitride by Enhanced ARE Process. Japanese Journal of Applied Physics, 17 (4) 757 doi:10.1143/jjap.17.757a
Mori, Hidefumi, Yoshihara, Hideo (1979) Ion Effect on γ-Al2O3Films by Enhanced ARE Process. Japanese Journal of Applied Physics, 18 (4) 837-838 doi:10.1143/jjap.18.837
Mori, Hidefumi, Yoshihara, Hideo (1978) Synthesis of Titanium Nitride by Enhanced ARE Process. Japanese Journal of Applied Physics, 17 (3) 575-576 doi:10.1143/jjap.17.575
Sekimoto, Misao, Yoshihara, Hideo, Ohkubo, Takashi, Saitoh, Yasunao (1981) Silicon Nitride Single-Layer X-Ray Mask. Japanese Journal of Applied Physics, 20 (9) doi:10.1143/jjap.20.l669
Oda, Masatoshi, Une, Atsunobu, Okada, Ikuo, Shinohara, Shinji, Nakayama, Yasuo, Yoshihara, Hideo (1995) A Highly Accurate Stress Measurement System for Producing Precise X-Ray Masks. Japanese Journal of Applied Physics, 34. 6729-6733 doi:10.1143/jjap.34.6729
Yoshihara, Hideo, Mori, Hidefumi, Kiuchi, Mikiho, Kadota, Toshiki (1978) Preparation of Si–C Films by Plasma Deposition Process with Neutralization. Japanese Journal of Applied Physics, 17 (9) 1693-1694 doi:10.1143/jjap.17.1693
Wang, Qiamin (1996) Optimization of the Deposition Process Parameters for Preparation ofIn2O3Films by Reactive Evaporation of Indium Metal. Japanese Journal of Applied Physics, 35. 736-737 doi:10.1143/jjap.35.736
Maeda, Yasushi, Hirono, Shigeru, Yoshii, Shizuka (1981) Preparation of Perpendicular Magnetic Co-Cr Films by Vacuum Evaporation. Japanese Journal of Applied Physics, 20 (7) doi:10.1143/jjap.20.l467
Yoshihara, Hideo, Mori, Hidefumi, Kikuchi, Mikiho (1977) Synthesis of SiC Films by Plasma Deposition Process. Japanese Journal of Applied Physics, 16 (11) 2047-2048 doi:10.1143/jjap.16.2047
Oshima, Masaharu (1981) Optical Spectroscopy in Reactive Sputter Etching and Its Application to Process Control. Japanese Journal of Applied Physics, 20 (4) 683-690 doi:10.1143/jjap.20.683
 
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