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Oshima, Masaharu, Seki, Masahiro, Kawashima, Izumi (1978) Quantitative Analysis of Na in Si with SIMS. Japanese Journal of Applied Physics, 17 (9) 1697-1698 doi:10.1143/jjap.17.1697

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Reference TypeJournal (article/letter/editorial)
TitleQuantitative Analysis of Na in Si with SIMS
JournalJapanese Journal of Applied Physics
AuthorsOshima, MasaharuAuthor
Seki, MasahiroAuthor
Kawashima, IzumiAuthor
Year1978 (September)Volume17
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.17.1697Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14982844Long-form Identifiermindat:1:5:14982844:6
GUID0
Full ReferenceOshima, Masaharu, Seki, Masahiro, Kawashima, Izumi (1978) Quantitative Analysis of Na in Si with SIMS. Japanese Journal of Applied Physics, 17 (9) 1697-1698 doi:10.1143/jjap.17.1697
Plain TextOshima, Masaharu, Seki, Masahiro, Kawashima, Izumi (1978) Quantitative Analysis of Na in Si with SIMS. Japanese Journal of Applied Physics, 17 (9) 1697-1698 doi:10.1143/jjap.17.1697
In(1978, September) Japanese Journal of Applied Physics Vol. 17 (9) Japan Society of Applied Physics

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Oshima, Masaharu, Kawashima, Izumi, Yoshii, Shizuka (1980) Quantitative Analysis of Semiconductor Materials with Secondary Ion Mass Spectrometer. Japanese Journal of Applied Physics, 19. 501 doi:10.7567/jjaps.19s1.501
Oshima, Masaharu (1978) Monitoring of Dry Etching Process of SiO2on Si by Using Mass Spectra. Japanese Journal of Applied Physics, 17 (3) 579-580 doi:10.1143/jjap.17.579
Oshima, Masaharu (1978) Determination of Plasma Gas Temperature during Reactive Sputter Etching. Japanese Journal of Applied Physics, 17 (6) 1157-1158 doi:10.1143/jjap.17.1157
Kawamura, Tomoaki, Oshima, Masaharu, Fukuda, Yukio, Ohmachi, Yoshiro, Izumi, Koichi, Ishikawa, Tetsuya, Kikuta, Seishi, Wei, Zhang Xiao (1992) X-Ray Standing Wave Analysis of Al/GaAs/Si(111) Japanese Journal of Applied Physics, 31. 737-741 doi:10.1143/jjap.31.737
Kawamura, Tomoaki, Takenaka, Hisataka, Uneta, Makoto, Oshima, Masaharu, Fukuda, Yukio, Ohmachi, Yoshiro, Izumi, Koichi, Ishikawa, Tetsuya, Kikuta, Seishi, Zhang, Xiao Wei (1993) X-Ray Standing Wave Analysis of GaAs/Si Interface. Japanese Journal of Applied Physics, 32. 622-625 doi:10.1143/jjap.32.622
Matsumoto, Nobuo, Ando, Seigo (1977) Short Cavity Semiconductor Laser. Japanese Journal of Applied Physics, 16 (9) 1697-1698 doi:10.1143/jjap.16.1697
Oshima, Masaharu (1981) Use of Mass Spectra for End Point Detection in Etching SiO2Films on Si. Japanese Journal of Applied Physics, 20 (7) 1255-1263 doi:10.1143/jjap.20.1255
Fujioka, Hiroshi, Noma, Hirokazu, Ono, Kanta, Oshima, Masaharu (2000) Effect of Impurity at SiO2/Si Interface on 2D Hole Gas. Japanese Journal of Applied Physics, 39. 4657-4659 doi:10.1143/jjap.39.4657
Yabumoto, Norikuni, Oshima, Masaharu, Michikami, Osamu, Yoshii, Shizuka (1981) Surface Damage on Si Substrates Caused by Reactive Sputter Etching. Japanese Journal of Applied Physics, 20 (5) 893-900 doi:10.1143/jjap.20.893
Ohsawa, Jun, Nishinaga, Tatau, Uchiyama, Susumu (1978) Si Contamination in Epitaxial Boron Monophosphide. Japanese Journal of Applied Physics, 17 (9) 1579-1586 doi:10.1143/jjap.17.1579
Thein, Aye, Kitagawa, Yoneyoshi, Yamada, Yoshiyuki, Takahashi, Ryukichi, Tsuda, Izumi, Yokoyama, Masahiro (1978) Pressure Dependence of Self-generated Magnetic Field in CO2Laser Produced CD2Target Plasma. Japanese Journal of Applied Physics, 17 (1) 245-246 doi:10.1143/jjap.17.245
 
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