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Yabumoto, Norikuni, Oshima, Masaharu, Michikami, Osamu, Yoshii, Shizuka (1981) Surface Damage on Si Substrates Caused by Reactive Sputter Etching. Japanese Journal of Applied Physics, 20 (5) 893-900 doi:10.1143/jjap.20.893

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Reference TypeJournal (article/letter/editorial)
TitleSurface Damage on Si Substrates Caused by Reactive Sputter Etching
JournalJapanese Journal of Applied Physics
AuthorsYabumoto, NorikuniAuthor
Oshima, MasaharuAuthor
Michikami, OsamuAuthor
Yoshii, ShizukaAuthor
Year1981 (May)Volume20
Issue5
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.20.893Search in ResearchGate
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Mindat Ref. ID14984982Long-form Identifiermindat:1:5:14984982:3
GUID0
Full ReferenceYabumoto, Norikuni, Oshima, Masaharu, Michikami, Osamu, Yoshii, Shizuka (1981) Surface Damage on Si Substrates Caused by Reactive Sputter Etching. Japanese Journal of Applied Physics, 20 (5) 893-900 doi:10.1143/jjap.20.893
Plain TextYabumoto, Norikuni, Oshima, Masaharu, Michikami, Osamu, Yoshii, Shizuka (1981) Surface Damage on Si Substrates Caused by Reactive Sputter Etching. Japanese Journal of Applied Physics, 20 (5) 893-900 doi:10.1143/jjap.20.893
In(1981, May) Japanese Journal of Applied Physics Vol. 20 (5) Japan Society of Applied Physics

See Also

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Oshima, Masaharu (1981) Optical Spectroscopy in Reactive Sputter Etching and Its Application to Process Control. Japanese Journal of Applied Physics, 20 (4) 683-690 doi:10.1143/jjap.20.683
Oshima, Masaharu, Sugahara, Hirohiko, Kawamura, Naoki, Yabumoto, Norikuni, Minegishi, Kazushige (1991) Photoemission Study on Initial Oxidation of Si Surfaces by Super-Pure Oxygen Gas. Japanese Journal of Applied Physics, 30. 116-120 doi:10.1143/jjap.30.116
Oshima, Masaharu (1978) Determination of Plasma Gas Temperature during Reactive Sputter Etching. Japanese Journal of Applied Physics, 17 (6) 1157-1158 doi:10.1143/jjap.17.1157
Oshima, Masaharu (1981) Use of Mass Spectra for End Point Detection in Etching SiO2Films on Si. Japanese Journal of Applied Physics, 20 (7) 1255-1263 doi:10.1143/jjap.20.1255
Michikami, Osamu, Katoh, Yujiro, Yoshii, Shizuka (1983) Nb/Nb oxide/Pb Josephson Tunnel Junctions Fabricated Using CF4Cleaning Process. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l91
Tanabe, Keiichi, Michikami, Osamu (1982) Properties of Nb3Al Thin Films Sputter-Deposited on Sapphire Substrates. Japanese Journal of Applied Physics, 21. 1427-1430 doi:10.1143/jjap.21.1427
Sugiyama, Munehiro, Yabumoto, Norikuni, Satoshi Maeyama, Satoshi Maeyama, Masaharu Oshima, Masaharu Oshima (1995) Annealing Effects on (NH4)2Sx-Treated GaAs(001) and InP(001) Surfaces. Japanese Journal of Applied Physics, 34 (12) doi:10.7567/jjap.34.l1588
Tanabe, Keiichi, Michikami, Osamu (1981) Synthesis of Nb3Al Thin Films by Magnetron Sputtering. Japanese Journal of Applied Physics, 20 (5) doi:10.1143/jjap.20.l359
Tanabe, Keiichi, Michikami, Osamu (1982) AES Analysis of Nb3Al Thin Films Sputter-Deposited on Oxidized Silicon Substrates. Japanese Journal of Applied Physics, 21. 961 doi:10.1143/jjap.21.961
Sugiyama, Munehiro, Yabumoto, Norikuni, Maeyama, Satoshi, Oshima, Masaharu (1995) Annealing Effects on $\bf (NH_{4})_{2}S_{\ninmbi x}$-Treated GaAs(001) and InP(001) Surfaces. Japanese Journal of Applied Physics, 34. doi:10.1143/jjap.34.l1588
Kuwano, Hiroki, Miyake, Shojiro, Kasai, Toshio (1982) Dry Cleaning of Si Surface Contamination by Reactive Sputter Etching. Japanese Journal of Applied Physics, 21. 529-533 doi:10.1143/jjap.21.529
 
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