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Fuke, Shunro, Ohke, Shigeaki, Kuwahara, Kazuhiro (1979) Epitaxial Growth of Gap by GaPO4–C System. Japanese Journal of Applied Physics, 18 (9) 1867-1868 doi:10.1143/jjap.18.1867

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Growth of Gap by GaPO4–C System
JournalJapanese Journal of Applied Physics
AuthorsFuke, ShunroAuthor
Ohke, ShigeakiAuthor
Kuwahara, KazuhiroAuthor
Year1979 (September)Volume18
Issue9
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.18.1867Search in ResearchGate
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Mindat Ref. ID14983399Long-form Identifiermindat:1:5:14983399:0
GUID0
Full ReferenceFuke, Shunro, Ohke, Shigeaki, Kuwahara, Kazuhiro (1979) Epitaxial Growth of Gap by GaPO4–C System. Japanese Journal of Applied Physics, 18 (9) 1867-1868 doi:10.1143/jjap.18.1867
Plain TextFuke, Shunro, Ohke, Shigeaki, Kuwahara, Kazuhiro (1979) Epitaxial Growth of Gap by GaPO4–C System. Japanese Journal of Applied Physics, 18 (9) 1867-1868 doi:10.1143/jjap.18.1867
In(1979, September) Japanese Journal of Applied Physics Vol. 18 (9) Japan Society of Applied Physics

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Imai, Tetsuji, Fuke, Shunro, \testscWatanabe, Masahiko, Araki, Hitosi, Kuwahara, Kazuhiro (1988) The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates. Japanese Journal of Applied Physics, 27. 68-71 doi:10.1143/jjap.27.68
Takano, Yasushi, Morizumi, Kenta, Watanabe, Satoshi, Masuda, Hiroyuki, Okamoto, Takuya, Noda, Kunihiro, Fukuda, Shinya, Ozeki, Tomokazu, Kuwahara, Kazuhiro, Fuke, Shunro, Furukawa, Yuzo, Yonezu, Hiroo (2009) High-Temperature Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 48 (1) 11102 doi:10.1143/jjap.48.011102
Takano, Yasushi, Masuda, Masako, Shirakawa, Yasufumi, Kuwahara, Kazuhiro, Fuke, Shunro (2000) Structural Investigation of Metalorganic Chemical-Vapor-Deposition-Grown InGaAs Layers on Misoriented GaAs Substrates. Japanese Journal of Applied Physics, 39. doi:10.1143/jjap.39.l901
Imai, Tetsuji, Fuke, Shunro, Izawa, Makoto, Kuwahara, Kazuhiro (1988) Effect of substrate materials in the growth of ZnSe on GaAs and GaP substrates. Journal of Applied Physics, 64 (3). 1245-1248 doi:10.1063/1.341842
Fuke, Shunro, Araki, Hitoshi, Kuwahara, Kazuhiro, Imai, Tetsuji (1987) The effects of In doping on the heteroepitaxial growth of ZnS on GaP substrates. Journal of Applied Physics, 61 (11). 5023-5026 doi:10.1063/1.338323
Imai, Tetsuji, Fuke, Shunro, Kasai, Kunihiro, Kuwahara, Kazuhiro (1988) Iodine-doping effects on the hetero-epitaxial growth of ZnS on GaP substrate using VPE method. Applied Surface Science, 33. 654-660 doi:10.1016/0169-4332(88)90365-0
Fuke, Shunro, Imai, Tetsuji, Irisawa, Shin‐ichi, Kuwahara, Kazuhiro (1990) Iodine‐doping effects on the vapor‐phase epitaxial growth of ZnSe on GaAs substrates. Journal of Applied Physics, 67 (1). 247-250 doi:10.1063/1.345297
Fuke, Shunro, Sugihara, Yoshihide, Maezawa, Chikako, Kuwahara, Kazuhiro, Imai, Tetsuji (1991) Li and Sb doping effects on the growth behavior of ZnS on GaP substrates. Journal of Applied Physics, 69 (12). 8126-8129 doi:10.1063/1.347464
Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro (1988) Growth of GaAs epitaxial layers prepared in the laboratory with an integrated safety MOCVD system. Applied Surface Science, 33. 587-593 doi:10.1016/0169-4332(88)90356-x
Fuke, Shunro, Washiyama, Masako, Otsuka, Koji, Aoki, Masaharu (1971) Solution Growth of Highly Perfect Crystals of Zinc Telluride. Japanese Journal of Applied Physics, 10 (6) 687-692 doi:10.1143/jjap.10.687
Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro (1989) Some properties of organometallic vapor‐phase epitaxial grown GaAs layers on In‐doped GaAs substrates. Journal of Applied Physics, 65 (10). 3877-3882 doi:10.1063/1.343351
 
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