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Imai, Tetsuji, Fuke, Shunro, \testscWatanabe, Masahiko, Araki, Hitosi, Kuwahara, Kazuhiro (1988) The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates. Japanese Journal of Applied Physics, 27. 68-71 doi:10.1143/jjap.27.68

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Reference TypeJournal (article/letter/editorial)
TitleThe Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates
JournalJapanese Journal of Applied Physics
AuthorsImai, TetsujiAuthor
Fuke, ShunroAuthor
\testscWatanabe, MasahikoAuthor
Araki, HitosiAuthor
Kuwahara, KazuhiroAuthor
Year1988 (January 20)Volume27
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.27.68Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14992037Long-form Identifiermindat:1:5:14992037:9
GUID0
Full ReferenceImai, Tetsuji, Fuke, Shunro, \testscWatanabe, Masahiko, Araki, Hitosi, Kuwahara, Kazuhiro (1988) The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates. Japanese Journal of Applied Physics, 27. 68-71 doi:10.1143/jjap.27.68
Plain TextImai, Tetsuji, Fuke, Shunro, \testscWatanabe, Masahiko, Araki, Hitosi, Kuwahara, Kazuhiro (1988) The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates. Japanese Journal of Applied Physics, 27. 68-71 doi:10.1143/jjap.27.68
In(1988) Japanese Journal of Applied Physics Vol. 27. Japan Society of Applied Physics

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Imai, Tetsuji, Fuke, Shunro, Kasai, Kunihiro, Kuwahara, Kazuhiro (1988) Iodine-doping effects on the hetero-epitaxial growth of ZnS on GaP substrate using VPE method. Applied Surface Science, 33. 654-660 doi:10.1016/0169-4332(88)90365-0
Fuke, Shunro, Araki, Hitoshi, Kuwahara, Kazuhiro, Imai, Tetsuji (1987) The effects of In doping on the heteroepitaxial growth of ZnS on GaP substrates. Journal of Applied Physics, 61 (11). 5023-5026 doi:10.1063/1.338323
Fuke, Shunro, Imai, Tetsuji, Irisawa, Shin‐ichi, Kuwahara, Kazuhiro (1990) Iodine‐doping effects on the vapor‐phase epitaxial growth of ZnSe on GaAs substrates. Journal of Applied Physics, 67 (1). 247-250 doi:10.1063/1.345297
Fuke, Shunro, Sugihara, Yoshihide, Maezawa, Chikako, Kuwahara, Kazuhiro, Imai, Tetsuji (1991) Li and Sb doping effects on the growth behavior of ZnS on GaP substrates. Journal of Applied Physics, 69 (12). 8126-8129 doi:10.1063/1.347464
Imai, Tetsuji, Fuke, Shunro, Izawa, Makoto, Kuwahara, Kazuhiro (1988) Effect of substrate materials in the growth of ZnSe on GaAs and GaP substrates. Journal of Applied Physics, 64 (3). 1245-1248 doi:10.1063/1.341842
Fuke, Shunro, Maezawa, Chikako, Nakamura, Kazuo, Kuwahara, Kazuhiro, Imai, Tetsuji (1992) Lowering of the growth temperature by the iodine incorporation for vapor‐phase epitaxy of ZnS. Journal of Applied Physics, 71 (7). 3611-3613 doi:10.1063/1.350917
Fuke, Shunro, Ohke, Shigeaki, Kuwahara, Kazuhiro (1979) Epitaxial Growth of Gap by GaPO4–C System. Japanese Journal of Applied Physics, 18 (9) 1867-1868 doi:10.1143/jjap.18.1867
Fuke, S., Araki, H., Kuwahara, K., Imai, T. (1986) Indium doping effects on vapor‐phase growth of ZnS on GaP. Journal of Applied Physics, 59 (5). 1761-1763 doi:10.1063/1.336443
Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro (1989) Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In‐doped substrates. Applied Physics Letters, 54 (9). 816-818 doi:10.1063/1.100856
Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro (1989) Some properties of organometallic vapor‐phase epitaxial grown GaAs layers on In‐doped GaAs substrates. Journal of Applied Physics, 65 (10). 3877-3882 doi:10.1063/1.343351
Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro, Imai, Tetsuji (1990) Strain relaxation of GaAs layers grown on heavily In‐doped substrates by organometallic vapor phase epitaxy. Journal of Applied Physics, 68 (3). 1013-1017 doi:10.1063/1.346737
 
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