| Reference Type | Journal (article/letter/editorial) |
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| Title | Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In‐doped substrates |
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| Journal | Applied Physics Letters |
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| Authors | Imai, Tetsuji | Author |
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| Fuke, Shunro | Author |
| Mori, Katsumi | Author |
| Kuwahara, Kazuhiro | Author |
| Year | 1989 (February 27) | Volume | 54 |
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| Issue | 9 |
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| Publisher | AIP Publishing |
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| DOI | doi:10.1063/1.100856Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 8487613 | Long-form Identifier | mindat:1:5:8487613:3 |
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| GUID | 0 |
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| Full Reference | Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro (1989) Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In‐doped substrates. Applied Physics Letters, 54 (9). 816-818 doi:10.1063/1.100856 |
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| Plain Text | Imai, Tetsuji, Fuke, Shunro, Mori, Katsumi, Kuwahara, Kazuhiro (1989) Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In‐doped substrates. Applied Physics Letters, 54 (9). 816-818 doi:10.1063/1.100856 |
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| In | (1989, February) Applied Physics Letters Vol. 54 (9) AIP Publishing |
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