| Reference Type | Journal (article/letter/editorial) |
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| Title | Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs |
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| Journal | Japanese Journal of Applied Physics |
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| Authors | Badawi, M. H. | Author |
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| Sealy, B. J. | Author |
| Stephens, K. G. | Author |
| Akintunde, J. A. | Author |
| Year | 1980 (January 1) | Volume | 19 |
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| Publisher | Japan Society of Applied Physics |
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| DOI | doi:10.7567/jjaps.19s1.139Search in ResearchGate |
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| Generate Citation Formats |
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| Mindat Ref. ID | 14983417 | Long-form Identifier | mindat:1:5:14983417:1 |
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|
| GUID | 0 |
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| Full Reference | Badawi, M. H., Sealy, B. J., Stephens, K. G., Akintunde, J. A. (1980) Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs. Japanese Journal of Applied Physics, 19. 139 doi:10.7567/jjaps.19s1.139 |
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| Plain Text | Badawi, M. H., Sealy, B. J., Stephens, K. G., Akintunde, J. A. (1980) Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs. Japanese Journal of Applied Physics, 19. 139 doi:10.7567/jjaps.19s1.139 |
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| In | (1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics |
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