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Shahid, M. A., Sealy, B. J., Puttick, K. E. (1984) The laser energy window for ion-implanted GaAs. Journal of Materials Science, 19. 3887-3894 doi:10.1007/bf00980752

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Reference TypeJournal (article/letter/editorial)
TitleThe laser energy window for ion-implanted GaAs
JournalJournal of Materials Science
AuthorsShahid, M. A.Author
Sealy, B. J.Author
Puttick, K. E.Author
Year1984 (December)Volume19
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00980752Search in ResearchGate
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Mindat Ref. ID9986236Long-form Identifiermindat:1:5:9986236:5
GUID0
Full ReferenceShahid, M. A., Sealy, B. J., Puttick, K. E. (1984) The laser energy window for ion-implanted GaAs. Journal of Materials Science, 19. 3887-3894 doi:10.1007/bf00980752
Plain TextShahid, M. A., Sealy, B. J., Puttick, K. E. (1984) The laser energy window for ion-implanted GaAs. Journal of Materials Science, 19. 3887-3894 doi:10.1007/bf00980752
In(n.d.) Journal of Materials Science Vol. 19. Springer Science and Business Media LLC

See Also

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Shahid, M. A., Topham, P. J., Sealy, B. J., Puttick, K. E. (1984) Laser alloyed tin layers on GaAs. Journal of Materials Science, 19. 2361-2367 doi:10.1007/bf01058112
Badawi, M. H., Sealy, B. J., Stephens, K. G., Akintunde, J. A. (1980) Improvement in Electrical Properties of Laser Annealed Ion Implanted GaAs. Japanese Journal of Applied Physics, 19. 139 doi:10.7567/jjaps.19s1.139
Sealy, B. J. (1975) An examination of tellurium ion-implanted GaAs by transmission electron microscopy. Journal of Materials Science, 10. 683-691 doi:10.1007/bf00566577
Badawi, M H, Sealy, B J, Stephens, K G (1982) Surface accumulation of ion-implanted tin in GaAs after laser annealing. Journal of Physics D: Applied Physics, 15. 507-513 doi:10.1088/0022-3727/15/3/016
Heulin, B., Sealy, B. J. (1986) Laser alloyed cadmium layers on GaAs. Journal of Materials Science, 21. 1070-1074 doi:10.1007/bf01117396
Barrett, N. J., Grange, J. D., Sealy, B. J., Stephens, K. G. (1984) Annealing of seleniumā€implanted GaAs. Journal of Applied Physics, 56 (12). 3503-3507 doi:10.1063/1.333916
Surridge, R K, Sealy, B J (1977) A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs. Journal of Physics D: Applied Physics, 10. 911-917 doi:10.1088/0022-3727/10/6/014
Sealy, B J, Barrett, N J, Bensalem, R (1986) The annealing mechanism of selenium implanted into GaAs. Journal of Physics D: Applied Physics, 19. 2147-2155 doi:10.1088/0022-3727/19/11/012
Barrett, N. J., Grange, J. D., Sealy, B. J., Stephens, K. G. (1985) Annealing of zincā€implanted GaAs. Journal of Applied Physics, 57 (12). 5470-5476 doi:10.1063/1.334823
Orlińska, K., Webb, M., Domagała, J., Vagovič, P., Bąk-Misiuk, J., Kozanecki, A., Sealy, B. (2005) X-ray investigation of hydrogen implanted GaAs. Acta Crystallographica Section A Foundations of Crystallography, 61. doi:10.1107/s010876730508270x
Shahid, M.A., Bensalem, R., Sealy, B.J., Favennec, P.N., Gauneau, M. (1988) Transient annealing of Sn+ implanted GaAs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 30 (4). 531-539 doi:10.1016/0168-583x(88)90129-2
 
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