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Surridge, R K, Sealy, B J (1977) A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs. Journal of Physics D: Applied Physics, 10. 911-917 doi:10.1088/0022-3727/10/6/014

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Reference TypeJournal (article/letter/editorial)
TitleA comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs
JournalJournal of Physics D: Applied Physics
AuthorsSurridge, R KAuthor
Sealy, B JAuthor
Year1977 (April 21)Volume10
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/10/6/014Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5660131Long-form Identifiermindat:1:5:5660131:4
GUID0
Full ReferenceSurridge, R K, Sealy, B J (1977) A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs. Journal of Physics D: Applied Physics, 10. 911-917 doi:10.1088/0022-3727/10/6/014
Plain TextSurridge, R K, Sealy, B J (1977) A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs. Journal of Physics D: Applied Physics, 10. 911-917 doi:10.1088/0022-3727/10/6/014
In(1977) Journal of Physics D: Applied Physics Vol. 10. IOP Publishing

See Also

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Badawi, M H, Sealy, B J, Stephens, K G (1982) Surface accumulation of ion-implanted tin in GaAs after laser annealing. Journal of Physics D: Applied Physics, 15. 507-513 doi:10.1088/0022-3727/15/3/016
Butcher, D N, Sealy, B J (1978) The thermal oxidation of GaAs. Journal of Physics D: Applied Physics, 11. 1451-1456 doi:10.1088/0022-3727/11/10/012
Hampshire, M J, Crooks, J R (1977) Photovoltaic response of n-n Ge-Si heterodiodes. Journal of Physics D: Applied Physics, 10. 2491-2505 doi:10.1088/0022-3727/10/18/014
Sealy, B J, Barrett, N J, Bensalem, R (1986) The annealing mechanism of selenium implanted into GaAs. Journal of Physics D: Applied Physics, 19. 2147-2155 doi:10.1088/0022-3727/19/11/012
Gill, S S, Sealy, B J, Stephens, K G (1981) Rutherford back-scattering and ellipsometry of selenium implanted InP. Journal of Physics D: Applied Physics, 14. 1915-1922 doi:10.1088/0022-3727/14/10/024
Andersen, T, Lindgard, A (1977) Radiative lifetimes of excited levels in three-electron systems: Ga I, Ge II, As III, Se IV and In I, Sn II, Sb III, Te IV. Journal of Physics B: Atomic and Molecular Physics, 10. 2359-2368 doi:10.1088/0022-3700/10/12/014
Bradley, D J, Allenson, M B, Holeman, B R (1977) The transverse energy of electrons emitted from GaAs photocathodes. Journal of Physics D: Applied Physics, 10. 111-125 doi:10.1088/0022-3727/10/1/013
Alger, S R, Rees, J A (1977) Positive and negative ion reactions in carbon dioxide. Journal of Physics D: Applied Physics, 10. 957-968 doi:10.1088/0022-3727/10/7/002
Pozwolski, A E (1977) Mass separation effect in plasmas. Journal of Physics D: Applied Physics, 10. 1653-1657 doi:10.1088/0022-3727/10/12/014
Gill, P, Webb, C E (1977) Negative glow and positive column discharges for helium/metal-vapour lasers-a comparison. Journal of Physics D: Applied Physics, 10. 2235-2244 doi:10.1088/0022-3727/10/16/014
Brinkman, A W, Kirk, D L (1977) The role of thermal annealing in changing the interfacial microstructure of Ge-ZnSe heterojunctions. Journal of Physics D: Applied Physics, 10. 499-508 doi:10.1088/0022-3727/10/4/014
 
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