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Gill, S S, Sealy, B J, Stephens, K G (1981) Rutherford back-scattering and ellipsometry of selenium implanted InP. Journal of Physics D: Applied Physics, 14. 1915-1922 doi:10.1088/0022-3727/14/10/024

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Reference TypeJournal (article/letter/editorial)
TitleRutherford back-scattering and ellipsometry of selenium implanted InP
JournalJournal of Physics D: Applied Physics
AuthorsGill, S SAuthor
Sealy, B JAuthor
Stephens, K GAuthor
Year1981 (October 14)Volume14
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/14/10/024Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5661105Long-form Identifiermindat:1:5:5661105:6
GUID0
Full ReferenceGill, S S, Sealy, B J, Stephens, K G (1981) Rutherford back-scattering and ellipsometry of selenium implanted InP. Journal of Physics D: Applied Physics, 14. 1915-1922 doi:10.1088/0022-3727/14/10/024
Plain TextGill, S S, Sealy, B J, Stephens, K G (1981) Rutherford back-scattering and ellipsometry of selenium implanted InP. Journal of Physics D: Applied Physics, 14. 1915-1922 doi:10.1088/0022-3727/14/10/024
In(1981) Journal of Physics D: Applied Physics Vol. 14. IOP Publishing

See Also

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Gill, S S, Topham, P J, Sealy, B J, Stephens, K G (1981) Pulsed laser annealing of selenium implanted InP. Journal of Physics D: Applied Physics, 14. 2333-2339 doi:10.1088/0022-3727/14/12/024
Badawi, M H, Sealy, B J, Stephens, K G (1982) Surface accumulation of ion-implanted tin in GaAs after laser annealing. Journal of Physics D: Applied Physics, 15. 507-513 doi:10.1088/0022-3727/15/3/016
Barrett, N. J., Grange, J. D., Sealy, B. J., Stephens, K. G. (1984) Annealing of selenium‐implanted GaAs. Journal of Applied Physics, 56 (12). 3503-3507 doi:10.1063/1.333916
Dawkins, A (1981) Clarification of Aronowitz's theory for the effects of back-scattering in a ring laser. Journal of Physics D: Applied Physics, 14. doi:10.1088/0022-3727/14/10/001
Sealy, B J, Barrett, N J, Bensalem, R (1986) The annealing mechanism of selenium implanted into GaAs. Journal of Physics D: Applied Physics, 19. 2147-2155 doi:10.1088/0022-3727/19/11/012
Surridge, R K, Sealy, B J (1977) A comparison of Sn-, Ge-, Se- and Te-ion-implanted GaAs. Journal of Physics D: Applied Physics, 10. 911-917 doi:10.1088/0022-3727/10/6/014
Sundaram, K B, Bhagavat, G K (1981) Chemical vapour deposition of tin oxide films and their electrical properties. Journal of Physics D: Applied Physics, 14. 333-338 doi:10.1088/0022-3727/14/2/024
Cole, J B, Swords, M D (1981) Journal of Physics D: Applied Physics, 14. IOP Publishing. 1731-1744 doi:10.1088/0022-3727/14/10/008
Roberts, R B (1981) Thermal expansion reference data: silicon 300-850 K. Journal of Physics D: Applied Physics, 14. doi:10.1088/0022-3727/14/10/003
Mendelson, K S (1981) Bulk modulus of a polycrystal. Journal of Physics D: Applied Physics, 14. 1307-1309 doi:10.1088/0022-3727/14/7/018
Damgaard, S, Petersen, J W, Weyer, G (1981) Radiogenic Sn defects in ion implanted InP. Journal of Physics C: Solid State Physics, 14 (7). 993-1000 doi:10.1088/0022-3719/14/7/005
 
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