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Yokoyama, Naoki, Mimura, Takashi, Kusakawa, Hirotsugu, Suyama, Katsuhiko, Fukuta, Masumi (1980) Low-Power, High-Speed Integrated Logic with GaAs MOSFET. Japanese Journal of Applied Physics, 19. 325 doi:10.7567/jjaps.19s1.325

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Reference TypeJournal (article/letter/editorial)
TitleLow-Power, High-Speed Integrated Logic with GaAs MOSFET
JournalJapanese Journal of Applied Physics
AuthorsYokoyama, NaokiAuthor
Mimura, TakashiAuthor
Kusakawa, HirotsuguAuthor
Suyama, KatsuhikoAuthor
Fukuta, MasumiAuthor
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s1.325Search in ResearchGate
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Mindat Ref. ID14983453Long-form Identifiermindat:1:5:14983453:9
GUID0
Full ReferenceYokoyama, Naoki, Mimura, Takashi, Kusakawa, Hirotsugu, Suyama, Katsuhiko, Fukuta, Masumi (1980) Low-Power, High-Speed Integrated Logic with GaAs MOSFET. Japanese Journal of Applied Physics, 19. 325 doi:10.7567/jjaps.19s1.325
Plain TextYokoyama, Naoki, Mimura, Takashi, Kusakawa, Hirotsugu, Suyama, Katsuhiko, Fukuta, Masumi (1980) Low-Power, High-Speed Integrated Logic with GaAs MOSFET. Japanese Journal of Applied Physics, 19. 325 doi:10.7567/jjaps.19s1.325
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

See Also

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Suyama, Katsuhiko, Kusakawa, Hirotsugu, Fukuta, Masumi (1979) GaAs Integrated Logic with Normally-Off MESFETs. Japanese Journal of Applied Physics, 18. 145 doi:10.7567/jjaps.18s1.145
Kusakawa, Hirotsugu, Suyama, Katsuhiko, Okamura, Shigeru, Fukuta, Masumi (1981) Planar GaAs IC's Using Multiple Localized Ion-Implantation. Japanese Journal of Applied Physics, 20. 229 doi:10.7567/jjaps.20s1.229
Fukuta, Masumi, Suyama, Katsuhiko, Yokoyama, Naoki, Ishikawa, Hajime (1976) Invited: GaAs X-Band Power FET. Japanese Journal of Applied Physics, 15. 151 doi:10.7567/jjaps.15s1.151
Mimura, Takashi, Yokoyama, Naoki, Nakayama, Yoshiro, Fukuta, Masumi (1978) Plasma-Grown Oxide Gate GaAs Deep Depletion MOS FET. Japanese Journal of Applied Physics, 17. 153 doi:10.7567/jjaps.17s1.153
Suzuki, Hidetake, Suyama, Katsuhiko, Odani, Kōichirō, Fukuta, Masumi (1978) C-Band 10 W Power GaAs MESFET with an Internal Matching Circuit. Japanese Journal of Applied Physics, 17. 143 doi:10.7567/jjaps.17s1.143
Mizutani, Takashi, Kato, Naoki, Ishida, Satoru, Asai, Kazuyoshi, Sakakibara, Yutaka, Komatsu, Kazuhiko, Ohmori, Masamichi (1980) High Speed Enhancement-Mode GaAs MESFET Integrated Circuits. Japanese Journal of Applied Physics, 19. 329 doi:10.7567/jjaps.19s1.329
Long, S. I., Welch, B. M., Eden, R. C., Lee, F. S., Zucca, R. (1980) MSI High Speed Low Power GaAs Integrated Circuits. Japanese Journal of Applied Physics, 19. 319 doi:10.7567/jjaps.19s1.319
Higashisaka, Asamitsu, Furutsuka, Takashi, Aono, Yoichi, Takayama, Yoichiro, Hasegawa, Fumio (1980) Power GaAs MESFETs with a Graded Recess Structure. Japanese Journal of Applied Physics, 19. 339 doi:10.7567/jjaps.19s1.339
Suyama, Katsuhiko, Shimizu, Haruo, Yokogawa, Shigeru, Nakayama, Yoshiro, Shibatomi, Akihiro (1983) An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology. Japanese Journal of Applied Physics, 22. 341 doi:10.7567/jjaps.22s1.341
Lehovec, Kurt (1980) VLSI GaAs Tunnel Diode-FET Logic and Memory Cell. Japanese Journal of Applied Physics, 19. 335 doi:10.7567/jjaps.19s1.335
Yokoyama, Naoki, Mimura, Takashi, Fukuta, Masumi (1979) Surface states in an n-GaAs/plasma grown native oxide — A modified deep level transient spectroscopy measurement. Surface Science, 86. 826-834 doi:10.1016/0039-6028(79)90464-3
 
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