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Suyama, Katsuhiko, Shimizu, Haruo, Yokogawa, Shigeru, Nakayama, Yoshiro, Shibatomi, Akihiro (1983) An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology. Japanese Journal of Applied Physics, 22. 341 doi:10.7567/jjaps.22s1.341

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Reference TypeJournal (article/letter/editorial)
TitleAn MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology
JournalJapanese Journal of Applied Physics
AuthorsSuyama, KatsuhikoAuthor
Shimizu, HaruoAuthor
Yokogawa, ShigeruAuthor
Nakayama, YoshiroAuthor
Shibatomi, AkihiroAuthor
Year1983 (January 1)Volume22
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.22s1.341Search in ResearchGate
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Mindat Ref. ID14986886Long-form Identifiermindat:1:5:14986886:2
GUID0
Full ReferenceSuyama, Katsuhiko, Shimizu, Haruo, Yokogawa, Shigeru, Nakayama, Yoshiro, Shibatomi, Akihiro (1983) An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology. Japanese Journal of Applied Physics, 22. 341 doi:10.7567/jjaps.22s1.341
Plain TextSuyama, Katsuhiko, Shimizu, Haruo, Yokogawa, Shigeru, Nakayama, Yoshiro, Shibatomi, Akihiro (1983) An MSI GaAs Integrated Circuit Using Ti/W Silicide Gate Technology. Japanese Journal of Applied Physics, 22. 341 doi:10.7567/jjaps.22s1.341
In(1983) Japanese Journal of Applied Physics Vol. 22. Japan Society of Applied Physics

See Also

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Kusakawa, Hirotsugu, Suyama, Katsuhiko, Okamura, Shigeru, Fukuta, Masumi (1981) Planar GaAs IC's Using Multiple Localized Ion-Implantation. Japanese Journal of Applied Physics, 20. 229 doi:10.7567/jjaps.20s1.229
Suzuki, Hidetake, Suyama, Katsuhiko, Odani, Kōichirō, Fukuta, Masumi (1978) C-Band 10 W Power GaAs MESFET with an Internal Matching Circuit. Japanese Journal of Applied Physics, 17. 143 doi:10.7567/jjaps.17s1.143
Suyama, Katsuhiko, Kusakawa, Hirotsugu, Fukuta, Masumi (1979) GaAs Integrated Logic with Normally-Off MESFETs. Japanese Journal of Applied Physics, 18. 145 doi:10.7567/jjaps.18s1.145
Mimura, Takashi, Yokoyama, Naoki, Nakayama, Yoshiro, Fukuta, Masumi (1978) Plasma-Grown Oxide Gate GaAs Deep Depletion MOS FET. Japanese Journal of Applied Physics, 17. 153 doi:10.7567/jjaps.17s1.153
Yokoyama, Naoki, Mimura, Takashi, Kusakawa, Hirotsugu, Suyama, Katsuhiko, Fukuta, Masumi (1980) Low-Power, High-Speed Integrated Logic with GaAs MOSFET. Japanese Journal of Applied Physics, 19. 325 doi:10.7567/jjaps.19s1.325
Shimizu, Hiroshi, Nakamura, Kiyoshi, Oyama, Shigeru (1983) A Piezoelectric Single-Plate Bending Vibrator Using Interdigital Electrodes. Japanese Journal of Applied Physics, 22. 163 doi:10.7567/jjaps.22s2.163
Fukuta, Masumi, Suyama, Katsuhiko, Yokoyama, Naoki, Ishikawa, Hajime (1976) Invited: GaAs X-Band Power FET. Japanese Journal of Applied Physics, 15. 151 doi:10.7567/jjaps.15s1.151
Yamasaki, Kimiyoshi, Asai, Kazuyoshi, Kurumada, Katsuhiko (1983) N+Self-Aligned MESFET for GaAs LSIs. Japanese Journal of Applied Physics, 22. 381 doi:10.7567/jjaps.22s1.381
Furukawa, Seijiro, Ishiwara, Hiroshi (1983) (Invited) Epitaxial Silicide Films for Integrated Circuits and Future Devices. Japanese Journal of Applied Physics, 22. 21 doi:10.7567/jjaps.22s1.21
Siqi, Cheng, Xianqi, Xia (1983) UHF/L Band Low-Noise Dual-Gate GaAs FETs. Japanese Journal of Applied Physics, 22. 371 doi:10.7567/jjaps.22s1.371
Ohata, Keiichi, Terao, Hiroshi, Sunakawa, Haruo, Takayama, Yoichiro (1983) MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs. Japanese Journal of Applied Physics, 22. 365 doi:10.7567/jjaps.22s1.365
 
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