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Adams, A. R., Hayes, J. R., Greene, P. D. (1980) The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s3.315

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Reference TypeJournal (article/letter/editorial)
TitleThe Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y
JournalJapanese Journal of Applied Physics
AuthorsAdams, A. R.Author
Hayes, J. R.Author
Greene, P. D.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s3.315Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983610Long-form Identifiermindat:1:5:14983610:6
GUID0
Full ReferenceAdams, A. R., Hayes, J. R., Greene, P. D. (1980) The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s3.315
Plain TextAdams, A. R., Hayes, J. R., Greene, P. D. (1980) The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s3.315
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Kelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Nahory, R. E., Pollack, M. A. (1980) Band Structure and Optical Properties of In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 327 doi:10.7567/jjaps.19s3.327
Zuleeg, R. (1980) (Invited) LSI Prospects of GaAs FET's. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s1.315
(1980) Scope and Vision in the Solar Photovoltaic R & D. Japanese Journal of Applied Physics, 19. 217 doi:10.7567/jjaps.19s2.217
Adams, Alfred R., Asada, Masahiro, Suematsu, Yasuharu, Arai, Shigehisa (1980) The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption. Japanese Journal of Applied Physics, 19 (10) doi:10.1143/jjap.19.l621
Daniel, P. J., Kramer, R. P. (1980) (Invited) Electron Image Projection. Japanese Journal of Applied Physics, 19. 41 doi:10.7567/jjaps.19s1.41
Greene, P. D., Wheeler, S. A., Adams, A. R., El‐Sabbahy, A. N., Ahmad, C. N. (1979) Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−ylayers. Applied Physics Letters, 35 (1). 78-80 doi:10.1063/1.90900
Trykozko, R., Filipowicz, J. (1980) Preparation and Optical Properties of ZnIn2Se4Crystals. Japanese Journal of Applied Physics, 19. 153 doi:10.7567/jjaps.19s3.153
Yamada, K., Lindström, M., Heleskivi, J., Galazka, R. R. (1980) Photoconduction in Cd1-xMnxTe. Japanese Journal of Applied Physics, 19. 361 doi:10.7567/jjaps.19s3.361
Chang, R. P. H. (1980) Selective Plasma Oxidation of GaAs –A Study of the Interface Properties. Japanese Journal of Applied Physics, 19. 483 doi:10.7567/jjaps.19s1.483
Kiyosawa, Teruo, Masumoto, Katashi (1980) Influence of Nonstoichiometry on the Properties of Undoped CdCr2Se4. Japanese Journal of Applied Physics, 19. 203 doi:10.7567/jjaps.19s3.203
Benoit, P., Charpin, P., Lesueur, R., Djega-Mariadassou, C. (1980) Crystal Structure of Chalcopyrite AgInSe2. Japanese Journal of Applied Physics, 19. 85 doi:10.7567/jjaps.19s3.85
 
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