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Kelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Nahory, R. E., Pollack, M. A. (1980) Band Structure and Optical Properties of In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 327 doi:10.7567/jjaps.19s3.327

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Reference TypeJournal (article/letter/editorial)
TitleBand Structure and Optical Properties of In1-xGaxAsyP1-y
JournalJapanese Journal of Applied Physics
AuthorsKelso, S. M.Author
Aspnes, D. E.Author
Olson, C. G.Author
Lynch, D. W.Author
Nahory, R. E.Author
Pollack, M. A.Author
Year1980 (January 1)Volume19
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjaps.19s3.327Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14983612Long-form Identifiermindat:1:5:14983612:0
GUID0
Full ReferenceKelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Nahory, R. E., Pollack, M. A. (1980) Band Structure and Optical Properties of In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 327 doi:10.7567/jjaps.19s3.327
Plain TextKelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Nahory, R. E., Pollack, M. A. (1980) Band Structure and Optical Properties of In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 327 doi:10.7567/jjaps.19s3.327
In(1980) Japanese Journal of Applied Physics Vol. 19. Japan Society of Applied Physics

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Kelso, S. M., Aspnes, D. E., Pollack, M. A., Nahory, R. E. (1982) Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry. Physical Review B, 26 (12) 6669-6681 doi:10.1103/physrevb.26.6669
Johnston, W. D., Epps, G. Y., Nahory, R. E., Pollack, M. A. (1978) Spatially resolved photoluminescence characterization and optically induced degradation of In1−xGaxAsyP1−yDH laser material. Applied Physics Letters, 33 (12). 992-994 doi:10.1063/1.90265
Mahajan, S., Johnston, W. D., Pollack, M. A., Nahory, R. E. (1979) The mechanism of optically induced degradation in InP/In1−xGaxAsyP1−yheterostructures. Applied Physics Letters, 34 (10). 717-719 doi:10.1063/1.90617
Nahory, R. E., Pollack, M. A., Johnston, W. D., Barns, R. L. (1978) Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−ylattice matched to InP. Applied Physics Letters, 33 (7). 659-661 doi:10.1063/1.90455
Adams, A. R., Hayes, J. R., Greene, P. D. (1980) The Influence of Alloy Scattering on Electrons and Holes in In1-xGaxAsyP1-y. Japanese Journal of Applied Physics, 19. 315 doi:10.7567/jjaps.19s3.315
Washington, M. A., Nahory, R. E., Pollack, M. A., Beebe, E. D. (1978) High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm. Applied Physics Letters, 33 (10). 854-856 doi:10.1063/1.90212
Kelso, S. M., Aspnes, D. E., Olson, C. G., Lynch, D. W., Finn, D. (1980) Electron-Core-Hole Interaction in GaAsP. Physical Review Letters, 45 (12). 1032-1035 doi:10.1103/physrevlett.45.1032
Pinczuk, A., Worlock, J. M., Nahory, R. E., Pollack, M. A. (1978) Lattice vibrations of In1−xGaxAsyP1−yquaternary compounds. Applied Physics Letters, 33 (5). 461-463 doi:10.1063/1.90379
Aspnes, D. E., Kelso, S. M., Olson, C. G., Lynch, D. W. (1982) Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs. Physical Review Letters, 48 (26). 1863-1866 doi:10.1103/physrevlett.48.1863
Bubulac, L. O., Tennant, W. E., Shin, S. H., Wang, C. C., Lanir, M., Gertner, E. R., Marshall, E. D. (1980) Ion Implantation Study of HgCdTe. Japanese Journal of Applied Physics, 19. 495 doi:10.7567/jjaps.19s1.495
Aspnes, D. E., Kelso, S. M., Logan, R. A., Bhat, R. (1986) Optical properties of AlxGa1−xAs. Journal of Applied Physics, 60 (2). 754-767 doi:10.1063/1.337426
 
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