Moriwaki, Kazuyuki, Masuda, Noboru, Aritome, Hiroaki, Namba, Susumu (1980) Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching. Japanese Journal of Applied Physics, 19 (3) 491-494 doi:10.1143/jjap.19.491
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Moriwaki, Kazuyuki | Author | |
| Masuda, Noboru | Author | ||
| Aritome, Hiroaki | Author | ||
| Namba, Susumu | Author | ||
| Year | 1980 (March) | Volume | 19 |
| Issue | 3 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.19.491Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 14983944 | Long-form Identifier | mindat:1:5:14983944:2 |
| GUID | 0 | ||
| Full Reference | Moriwaki, Kazuyuki, Masuda, Noboru, Aritome, Hiroaki, Namba, Susumu (1980) Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching. Japanese Journal of Applied Physics, 19 (3) 491-494 doi:10.1143/jjap.19.491 | ||
| Plain Text | Moriwaki, Kazuyuki, Masuda, Noboru, Aritome, Hiroaki, Namba, Susumu (1980) Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching. Japanese Journal of Applied Physics, 19 (3) 491-494 doi:10.1143/jjap.19.491 | ||
| In | (1980, March) Japanese Journal of Applied Physics Vol. 19 (3) Japan Society of Applied Physics | ||
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