Matsui, Shinji, Mizuki, Sin'ya, Yamato, Toshiya, Aritome, Hiroaki, Namba, Susumu (1981) Reactive Ion-Beam Etching of Silicon Carbide. Japanese Journal of Applied Physics, 20 (1) doi:10.1143/jjap.20.l38
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Reactive Ion-Beam Etching of Silicon Carbide | ||
| Journal | Japanese Journal of Applied Physics | ||
| Authors | Matsui, Shinji | Author | |
| Mizuki, Sin'ya | Author | ||
| Yamato, Toshiya | Author | ||
| Aritome, Hiroaki | Author | ||
| Namba, Susumu | Author | ||
| Year | 1981 (January) | Volume | 20 |
| Issue | 1 | ||
| Publisher | Japan Society of Applied Physics | ||
| DOI | doi:10.1143/jjap.20.l38Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 14984597 | Long-form Identifier | mindat:1:5:14984597:9 |
| GUID | 0 | ||
| Full Reference | Matsui, Shinji, Mizuki, Sin'ya, Yamato, Toshiya, Aritome, Hiroaki, Namba, Susumu (1981) Reactive Ion-Beam Etching of Silicon Carbide. Japanese Journal of Applied Physics, 20 (1) doi:10.1143/jjap.20.l38 | ||
| Plain Text | Matsui, Shinji, Mizuki, Sin'ya, Yamato, Toshiya, Aritome, Hiroaki, Namba, Susumu (1981) Reactive Ion-Beam Etching of Silicon Carbide. Japanese Journal of Applied Physics, 20 (1) doi:10.1143/jjap.20.l38 | ||
| In | (1981, January) Japanese Journal of Applied Physics Vol. 20 (1) Japan Society of Applied Physics | ||
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